Near planar native-oxid VCSEL device and arrays

OPT OpenIR > 半导体激光器专利数据库

	Near planar native-oxid VCSEL device and arrays
其他题名	Near planar native-oxid VCSEL device and arrays
	SCHNEIDER, RICHARD P., JR.; TAN, MICHAEL R.T.; CORZINE, SCOTT W.
	2000-04-26
专利权人	AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION
公开日期	2000-04-26
授权国家	欧洲专利局
专利类型	发明申请
摘要	A VCSEL [100] with a near planar top surface on which the top electrode [111] is deposited. A VCSEL [100] according to the present invention includes a top electrode [111], a top mirror [115] having a top surface, a light generation region [120], and a bottom mirror [116] for reflecting light toward the top mirror [115]. At least one of the mirrors includes a plurality of planar electrically conducting layers having different indices of refraction. In addition, at least one of the layers includes an oxidizable material. To expose this layer to an oxidizing agent (thereby converting the material to an electrical insulator), three or more holes [112] are etched down from the top surface of the VCSEL [100] to the layer [118] containing the oxidizable material. The oxidizing agent is then introduced into the top of these holes. The partial oxidation of the layer converts the layer to one having a conducting region [121] surrounded by an electrically insulating region, the conducting region being positioned under the top electrode.
其他摘要	具有近平面顶表面的VCSEL [100]，顶部电极[111]沉积在该顶表面上。根据本发明的VCSEL [100]包括顶部电极[111]，具有顶表面的顶部镜子[115]，光产生区域[120]和用于朝向顶部反射光的底部镜子[116]。镜子[115]。至少一个反射镜包括多个具有不同折射率的平面导电层。另外，至少一个层包括可氧化材料。为了将该层暴露于氧化剂（从而将材料转化为电绝缘体），从VCSEL [100]的顶表面向下蚀刻三个或更多个孔[112]至含有可氧化材料的层[118]。然后将氧化剂引入这些孔的顶部。该层的部分氧化将该层转换成具有由电绝缘区域围绕的导电区域[121]的层，该导电区域位于顶部电极下方。
主权项	A VCSEL [100] comprising: a top electrode [111]; a top mirror [115] having a top surface; a light generation region [120]; a bottom mirror [116] for reflecting light toward said top mirror [115], wherein at least one of said top mirror [115] and said bottom mirror [116] comprises a plurality of planar electrically conducting layers, at least one said layer having a different index of refraction from the layers adjacent to that layer, and wherein a first one of said layers [118] comprises an oxidizable material which is oxidized upon exposure to an oxidizing agent thereby converting said material to an electrical insulator; a bottom electrode [27]; and first, second, and third etched holes [112] connecting said top surface to said first one of said layers [118] for exposing said first one of said layers to said oxidizing agent, said exposure generating a conducting region [121] surrounded by an electrically insulating region, said conducting region being positioned under said top electrode [111].
申请日期	1998-05-29
专利号	EP0898344A3
专利状态	失效
申请号	EP1998109847
公开（公告）号	EP0898344A3
IPC 分类号	H01S5/00 \| H01S5/183 \| H01S5/42 \| H01S3/085 \| H01S3/25
专利代理人	-
代理机构	LIESEGANG, ROLAND, DR.-ING.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66501
专题	半导体激光器专利数据库
作者单位	AGILENT TECHNOLOGIES, INC. (A DELAWARE CORPORATION
推荐引用方式 GB/T 7714	SCHNEIDER, RICHARD P., JR.,TAN, MICHAEL R.T.,CORZINE, SCOTT W.. Near planar native-oxid VCSEL device and arrays. EP0898344A3[P]. 2000-04-26.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
EP0898344A3.PDF（65KB）	专利		开放获取	CC BY-NC-SA	请求全文