Xi'an Institute of Optics and Precision Mechanics,CAS
| Method for fabrication of semiconductor quantum box structure | |
| 其他题名 | Method for fabrication of semiconductor quantum box structure |
| YAMADA HIROHITO; KITAMURA MITSUHIRO; MITO IKUO | |
| 1990-03-20 | |
| 专利权人 | NEC CORP |
| 公开日期 | 1990-03-20 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To provide a semiconductor quantum box structure, which is applicable to different semiconductor devices, including optical device, by using macromolecules with uniform dia. as a mask for selective growing. CONSTITUTION:An n-AlGaAs barrier layer 12 is grown on a (100)n-GaAs base board 11, and spin coating is performed by floating polystylene balls 13 of 400Angstrom in dia. in an organic solvent. While the base board is heated to 600 deg.C, selective growth is made by MEB to form an n-GaAs well 14 in the form of an island of 70Angstrom in dia. on the barrier layer 12. This well layer 14 does not grow on the stylene balls, but grows only in the exposed region of barrier layer 12 surrounded by the polystylene balls. Accordingly a quantum box of 70Angstrom in dia. can be fabricated using polystylene balls of 400Angstrom in dia. The residual macromolecules (polystylene ball) are removed by plasma asher, and finally the whole wafer is embedded the n-GaAs well layer 14 by p-AlGaAs barrier layer 15. Thereby a semiconductor quantum box structure of approx. 70Angstrom in size is obtained. |
| 其他摘要 | 目的：提供一种半导体量子盒结构，适用于不同的半导体器件，包括光学器件，使用均匀直径的大分子。作为选择性成长的面具。组成：在（100）n-GaAs基板11上生长n-AlGaAs阻挡层12，并通过浮动直径为400埃的聚苯乙烯球13进行旋涂。在有机溶剂中。在将基板加热到600℃的同时，MEB选择性地生长以形成直径为70埃的岛形式的n-GaAs阱14。该阱层14不在样式球上生长，而是仅在由聚苯乙烯球包围的阻挡层12的暴露区域中生长。因此，直径为70埃的量子盒。可以使用直径为400埃的聚苯乙烯球制造。通过等离子体灰化器除去残留的大分子（聚苯乙烯球），最后通过p-AlGaAs阻挡层15将整个晶片嵌入n-GaAs阱层14中。由此得到大约半导体量子盒结构。获得70埃的尺寸。 |
| 主权项 | - |
| 申请日期 | 1988-09-14 |
| 专利号 | JP1990079489A |
| 专利状态 | 失效 |
| 申请号 | JP1988231706 |
| 公开（公告）号 | JP1990079489A |
| IPC 分类号 | H01L21/205 | H01L29/06 | H01S5/00 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/66191 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NEC CORP |
| 推荐引用方式 GB/T 7714 | YAMADA HIROHITO,KITAMURA MITSUHIRO,MITO IKUO. Method for fabrication of semiconductor quantum box structure. JP1990079489A[P]. 1990-03-20. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1990079489A.PDF（193KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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