Production of optical semiconductor device

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	Production of optical semiconductor device
其他题名	Production of optical semiconductor device
	YAMAZAKI SUSUMU
	1986-01-17
专利权人	FUJITSU KK
公开日期	1986-01-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To produce an optical semiconductor device of high quality without defect, by forming a buffer layer, light absorption layer and pural InGaAsP antimeltback layers of proper mixed crystal ratio, and growing an InP multiplication layer continuously thereto. CONSTITUTION:A light absorption layer 16 consisting of In0.53Ga0.47As in lattice matching with a substrate 12 consisting of InP through a buffer layer 15 consisting of InP in (111) A face of the substrate 12. Plural antimeltback layers 17 consisting of In1-xGaxAs1-yPy in lattice matching with the light absorption layer 16 are formed on the light absorption layer 16 by the liquid phase epitaxial growth continuously to the light absorption layer 16, and the x value is gradually decreased and the y value is gradually increased from the layer in contact with the light absorption layer 16 to the layer in contact with a multiplication layer 18 on the upper layer. The multiplication layer 18 consisting of InP is then formed on the antimeltback layers 17 continuously onto the antimeltback layers 17 by the liquid phase epitaxial growth to give the aimed optical semiconductor laminate of low carrier concentration in a desired extent.
其他摘要	目的：通过形成具有适当混晶比的缓冲层，光吸收层和壁厚InGaAsP反熔层，并连续生长InP倍增层，制造无缺陷的高质量光学半导体器件。组成：由In0.53Ga0.47As组成的光吸收层16与基板12晶格匹配，基板12由InP组成，缓冲层15由InP在（111）A基板12中组成。由In1组成的多个反熔层17通过液相外延生长连续到光吸收层16，在光吸收层16上形成与光吸收层16晶格匹配的-xGaxAs1-yPy，并且x值逐渐减小并且y值从逐渐增加与光吸收层16接触的层到与上层上的倍增层18接触的层。然后通过液相外延生长在反熔层17上将由InP组成的倍增层18连续地形成在反熔层17上，以得到所需程度的低载流子浓度的目标光半导体叠层。
主权项	-
申请日期	1985-04-30
专利号	JP1986010100A
专利状态	失效
申请号	JP1985093330
公开（公告）号	JP1986010100A
IPC 分类号	C30B19/00 \| C30B29/40 \| H01L21/208 \| H01L31/10 \| H01L31/107 \| H01L33/12 \| H01L33/16 \| H01L33/30 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66131
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	YAMAZAKI SUSUMU. Production of optical semiconductor device. JP1986010100A[P]. 1986-01-17.

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