V-coupled-cavity semiconductor laser

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	V-coupled-cavity semiconductor laser
其他题名	V-coupled-cavity semiconductor laser
	HE, JIAN-JUN
	2006-11-09
专利权人	HE JIAN-JUN
公开日期	2006-11-09
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser comprises two optical cavities, each comprising an optical waveguide bounded by two partially reflecting elements. The two optical waveguides are disposed on a substrate to form a substantially V-shaped geometry with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser. The first cavity has a length such that its resonant wavelengths correspond to a set of discrete operating channels. The second cavity has a slightly different length so that only one resonant wavelength coincides with one of the resonant wavelengths of the first cavity over the operating spectral window. The lasing action occurs at the common resonant wavelength. In operation, at least a portion of the optical waveguide in each of the first and the second cavities are forward biased to provide substantially equal round-trip optical gains. The second cavity is tuned by varying the effective refractive index of a portion of the waveguide through an electrical means, resulting in wavelength switching among the set of discrete operating wavelengths as determined by the first cavity.
其他摘要	半导体激光器包括两个光学腔，每个光学腔包括由两个部分反射元件界定的光学波导。两个光波导设置在基板上以形成基本上V形的几何形状，在开口端基本上没有交叉耦合，在封闭端基本没有预定的交叉耦合，以实现激光器的最佳单模选择性。第一腔的长度使得其谐振波长对应于一组离散的操作通道。第二腔具有略微不同的长度，使得在操作光谱窗口上仅一个谐振波长与第一腔的谐振波长之一一致。激光作用发生在共同的共振波长处。在操作中，第一和第二腔中的每一个中的光波导的至少一部分被正向偏置，以提供基本相等的往返光学增益。通过电气装置改变波导的一部分的有效折射率来调谐第二腔，导致由第一腔确定的一组离散工作波长之间的波长切换。
主权项	A semiconductor laser comprising: a first optical cavity comprising a first optical waveguide bounded by two partially reflecting elements, at least a portion of said first optical waveguide being pumped to provide optical gain, a second optical cavity comprising a second optical waveguide bounded by two partially reflecting elements, at least a portion of said second optical waveguide being pumped to provide optical gain, whereas the first and the second optical waveguides have different optical path lengths, and are disposed side-by-side on a substrate to form substantially V-shaped waveguide branches with substantially no cross-coupling at the open end and a predetermined cross-coupling at the closed end for achieving an optimal single-mode selectivity of the laser.
申请日期	2005-12-30
专利号	US20060251139A1
专利状态	授权
申请号	US11/306520
公开（公告）号	US20060251139A1
IPC 分类号	H01S5/00 \| H01S3/06 \| H01S3/14 \| H01S3/04 \| H01S3/07
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/66059
专题	半导体激光器专利数据库
作者单位	HE JIAN-JUN
推荐引用方式 GB/T 7714	HE, JIAN-JUN. V-coupled-cavity semiconductor laser. US20060251139A1[P]. 2006-11-09.