A method and apparatus for improving efficiency in opto-electronic radiation source devices

OPT OpenIR > 半导体激光器专利数据库

	A method and apparatus for improving efficiency in opto-electronic radiation source devices
其他题名	A method and apparatus for improving efficiency in opto-electronic radiation source devices
	GARBUZOV, DMITRI, ZALMANOVITCH; MENNA, RAYMOND, J.
	2002-09-26
专利权人	PRINCETON LIGHTWAVE, INC.
公开日期	2002-09-26
授权国家	世界知识产权组织
专利类型	发明申请
摘要	A method for improving the efficiency for an optoelectronic device, such as semiconductor lasers, Superluminescence Light Emitting Diodes (SLDs), Gain Chips, optical amplifiers is disclosed, see Fig. 4B. In accordance with the principles of the invention, at least one blocking layer (70) is interposed at the interface between materials composing the device. The at least one blocking layers creates a barrier that prevents the leakage of electrons from a device active region contained in the waveguide region, to a device clad region (66). In one aspect of the invention, a blocking layer (70) is formed at the junction of the semiconductor materials having different types of conductivity. The blocking layer prevents electrons from entering the material of a different polarity. In another aspect of the invention, a low-doped or undoped region (64) is positioned adjacent to the blocking layer (70) to decrease optical losses.
其他摘要	公开了一种用于提高光电器件效率的方法，例如半导体激光器，超发光发光二极管（SLD），增益芯片，光放大器，参见图4B。根据本发明的原理，至少一个阻挡层（70）插入在构成该器件的材料之间的界面处。所述至少一个阻挡层产生阻挡层，所述阻挡层防止电子从包含在波导区域中的器件有源区域泄漏到器件包层区域（66）。在本发明的一个方面，阻挡层（70）形成在具有不同导电类型的半导体材料的结处。阻挡层防止电子进入不同极性的材料。在本发明的另一个方面，低掺杂或未掺杂区域（64）位于阻挡层（70）附近，以减少光学损耗。
主权项	A method for improving efficiency of opto-electronic device composed of a plurality of semiconductor materials adjacently connected having different compositions, wherein a junction is formed between p-type composition materials and n-type composition materials, said method comprising; imposing a blocking layer coincident with said p/n junction wherein said blocking layer is formed from a material of such a composition to produce a barrier in a conduction band to inhibit electrons from traversing from an active region is said n-type materials to p-type materials; and imposing a material adjacent to said blocking layer having a doping level lower than an adjacently connected materials.
申请日期	2001-03-19
专利号	WO2002075878A1
专利状态	未确认
申请号	PCT/US2001/008941
公开（公告）号	WO2002075878A1
IPC 分类号	H01S5/32 \| H01S5/343 \| H01L33/04 \| H01S5/20 \| H01S5/30 \| H01L33/00 \| H01S5/00
专利代理人	BABINEAU, JAMES, W.
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65999
专题	半导体激光器专利数据库
作者单位	PRINCETON LIGHTWAVE, INC.
推荐引用方式 GB/T 7714	GARBUZOV, DMITRI, ZALMANOVITCH,MENNA, RAYMOND, J.. A method and apparatus for improving efficiency in opto-electronic radiation source devices. WO2002075878A1[P]. 2002-09-26.