Optical modulator and integratation type optical modulator and photodetector as well as production thereof

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	Optical modulator and integratation type optical modulator and photodetector as well as production thereof
其他题名	Optical modulator and integratation type optical modulator and photodetector as well as production thereof
	AJISAWA AKIRA; TERAKADO TOMOJI; YAMAGUCHI MASAYUKI; KOMATSU YOSHIRO
	1991-08-29
专利权人	日本電気株式会社
公开日期	1991-08-29
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To attain ultra-high-speed modulation and the widening of a frequency range and to improve a yield and uniformity by using a high-resistance semiconductor substrate and embedding a PIN structure optical waveguide with the high-resistance layer. CONSTITUTION:Striped means 69 having the pin structure in which an I layer of a low carrier concn. is formed as the semiconductor optical waveguide layer 66, the high-resistance layers 70 on both side faces of the striped means, and means for impressing electric fields to the semiconductor optical waveguide layer 66 are provided on the high-resistance semiconductor substrate 6 The inter-electrode distance is made longer than heretofore by using the high- resistance semiconductor substrate and the embedding structure of the semiconductor high- resistance layers. The wiring capacity and pad capacity are, therefore, decreased and the capacity over the entire part of the element is determined nearly by a junction capacity and the frequency range of the optical modulator is widened. The ultra-high-speed modulation as the integration type optical modulator is executed by having the PIN structure formed on the high-resistance substrate and embedded by the high-resistance layers. Thus, the ultra- high-speed modulation and the widening of the frequency range are possible in this way and the yield is improved.
其他摘要	目的：通过使用高阻半导体基板并在高阻抗层中嵌入PIN结构光波导，实现超高速调制和扩大频率范围，提高产量和均匀性。组成：条纹意味着69具有pin结构，其中I层的低载波浓缩。形成为半导体光波导层66，在条纹装置的两个侧面上的高电阻层70，以及用于将电场施加到半导体光波导层66的装置设置在高电阻半导体基板61上。通过使用高电阻半导体衬底和半导体高电阻层的嵌入结构，使电极间距离比迄今为止更长。因此，布线容量和焊盘容量减小，并且元件的整个部分的容量几乎由结容量确定，并且光调制器的频率范围变宽。作为集成型光调制器的超高速调制是通过在高电阻基板上形成PIN结构并由高电阻层嵌入来实现的。因此，以这种方式可以实现超高速调制和频率范围的扩大，并且提高了产量。
主权项	-
申请日期	1989-12-27
专利号	JP1991198025A
专利状态	失效
申请号	JP1989340101
公开（公告）号	JP1991198025A
IPC 分类号	G02B6/12 \| G02B6/13 \| G02F1/015 \| G02F1/025 \| H01S5/00 \| H01S5/026 \| H01S5/042 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65952
专题	半导体激光器专利数据库
作者单位	日本電気株式会社
推荐引用方式 GB/T 7714	AJISAWA AKIRA,TERAKADO TOMOJI,YAMAGUCHI MASAYUKI,et al. Optical modulator and integratation type optical modulator and photodetector as well as production thereof. JP1991198025A[P]. 1991-08-29.

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