Semiconductor light emitting device with super lattice structure

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	Semiconductor light emitting device with super lattice structure
其他题名	Semiconductor light emitting device with super lattice structure
	SUZUKI YOSHIFUMI; NAGANUMA MITSURU; OKAMOTO HIROSHI
	1982-09-20
专利权人	NIPPON DENSHIN DENWA KOSHA
公开日期	1982-09-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a semiconductor light emitting device with a low threshold current density in short wave bands and a longer service life by a method wherein either the active layer or clad layers or both are composed of a super lattice structure consisting of AlyGa1-ySb and AlxGa1-xSb layers. CONSTITUTION:Successively grown on a GaSb substrate 1 by the molecular beam epitaxial method or MOCVD method or the like are a lower clad layer 2 of a 1-2mum thick AlzGa1-zSb film, active layer 3 with a super lattice structure (0<=y<=0.2<=x<=z<=1, with the thickness of each layer not more than 200Angstrom ) of AlyGa1-ySb-AlxGa1-xSb, upper clad layer 4 of a 1-2mum thick AlzGa1-zSb film, and electrode layer 5 of an approximately 1mum thick GaSb film. A change in the super lattice structure AlyGa1-ySb layer 7 between 10-200Angstrom results in a change in emitted light lengths between 0-7mum. Replacing Sb with As results in the emission in a band of waves shorter than 7,000Angstrom .
其他摘要	目的：通过一种方法获得具有短波段低阈值电流密度和更长使用寿命的半导体发光器件，其中有源层或包层或两者均由AlyGa1-ySb组成的超晶格结构和AlxGa1-xSb层。组成：通过分子束外延法或MOCVD法等在GaSb衬底1上连续生长的是1-2μm厚的AlzGa1-zSb薄膜的下包层2，具有超晶格结构的有源层3（0 <= y <= 0.2 <= x <= z <= 1，各层的厚度不大于200埃）AlyGa1-ySb-AlxGa1-xSb，1-2μm厚的AlzGa1-zSb薄膜的上包层4，和电极层5是约1μm厚的GaSb薄膜。超晶格结构AlyGa1-ySb层7在10-200埃之间的变化导致发射光长度在0-7μm之间的变化。用As代替Sb会导致发射波长小于7,000埃的波段。
主权项	-
申请日期	1981-03-17
专利号	JP1982152178A
专利状态	失效
申请号	JP1981037250
公开（公告）号	JP1982152178A
IPC 分类号	H01L33/06 \| H01L33/30 \| H01S5/00 \| H01S5/343 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65946
专题	半导体激光器专利数据库
作者单位	NIPPON DENSHIN DENWA KOSHA
推荐引用方式 GB/T 7714	SUZUKI YOSHIFUMI,NAGANUMA MITSURU,OKAMOTO HIROSHI. Semiconductor light emitting device with super lattice structure. JP1982152178A[P]. 1982-09-20.