Variable-wavelength semiconductor laser and gas sensor using same

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	Variable-wavelength semiconductor laser and gas sensor using same
其他题名	Variable-wavelength semiconductor laser and gas sensor using same
	MORI, HIROSHI; KIKUGAWA, TOMOYUKI; TAKAHASHI, YOSHIO; SUZUKI, TOSHIYUKI; KIMURA, KIYOSHI
	2006-08-24
专利权人	MORI HIROSHI
公开日期	2006-08-24
授权国家	美国
专利类型	发明申请
摘要	A tunable wavelength semiconductor laser includes an n-type semiconductor substrate, an active layer which is disposed above the n-type semiconductor substrate and which generates light, a p-type cladding layer disposed above the active layer, and wavelength selecting section for causing to selectively oscillate only a specific wavelength from the light generated in the active layer. The tunable wavelength semiconductor layer capable of oscillating at the specific wavelength can be performed by injecting current into the active layer, and the specific wavelength can be varied by changing the magnitude of the current. A device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and a width of the active layer orthogonal to the propagation direction of the light generated in the active layer, and showing a length in a direction parallel to the n-type semiconductor substrate is about 1 μm to 2 μm. The p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.
其他摘要	可调谐波长半导体激光器包括n型半导体衬底，设置在n型半导体衬底上方并产生光的有源层，设置在有源层上方的p型覆层，以及用于使得有源层的波长选择部分。选择性地仅振荡来自有源层中产生的光的特定波长。能够在特定波长下振荡的可调波长半导体层可以通过将电流注入有源层来执行，并且可以通过改变电流的大小来改变特定波长。显示在有源层中产生的光的传播方向上的长度的器件长度为约200μm至500μm，并且有源层的宽度与在有源层中产生的光的传播方向正交，并且示出了在与n型半导体衬底平行的方向上的长度为约1μm至2μm。 p型包覆层包括具有低杂质浓度的轻掺杂包层和具有高杂质浓度的重掺杂包层，其从有源层侧依次排列。
主权项	A tunable wavelength semiconductor laser comprising: an n-type semiconductor substrate; an active layer which is disposed above the n-type semiconductor substrate and which generates light; a p-type cladding layer disposed above the active layer; and wavelength selecting means for causing to selectively oscillate only a specific wavelength from the light generated in the active layer, the tunable wavelength semiconductor laser capable of oscillating at the specific wavelength being performed by causing current to flow into the active layer, and the specific wavelength being varied by changing the magnitude of the current, wherein a device length showing a length in a propagation direction of the light generated in the active layer is about 200 μm to 500 μm, and the p-type cladding layer includes a lightly doped cladding layer having a low impurity concentration and a heavily doped cladding layer having a high impurity concentration which are sequentially arranged from the active layer side.
申请日期	2005-02-10
专利号	US20060187976A1
专利状态	失效
申请号	US10/548394
公开（公告）号	US20060187976A1
IPC 分类号	H01S3/10 \| H01S5/20 \| H01S5/00 \| G01J3/433 \| G01N21/39 \| H01S \| H01S5/024 \| H01S5/062 \| H01S5/0683 \| H01S5/10 \| H01S5/12 \| H01S5/227
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65927
专题	半导体激光器专利数据库
作者单位	MORI HIROSHI
推荐引用方式 GB/T 7714	MORI, HIROSHI,KIKUGAWA, TOMOYUKI,TAKAHASHI, YOSHIO,et al. Variable-wavelength semiconductor laser and gas sensor using same. US20060187976A1[P]. 2006-08-24.