OPT OpenIR  > 半导体激光器专利数据库
Photonic crystal surface emitting laser and method of manufacturing the same
其他题名Photonic crystal surface emitting laser and method of manufacturing the same
NUMATA, AIHIKO
2012-12-27
专利权人CANON KABUSHIKI KAISHA
公开日期2012-12-27
授权国家美国
专利类型发明申请
摘要A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
其他摘要一种光子晶体表面发射激光器,具有形成在基板上的n型包层;形成在n型包覆层上的有源层;电子阻挡层,形成在有源层上并由第二p型半导体制成;形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层,并且具有高和低折射率部分。面内方向。多个层的带隙小于第二p型半导体的带隙,并且在多个层​​的层叠方向上逐步或连续地减小。设置受主掺杂浓度小于第二p型半导体的第三p型半导体,以覆盖电子阻挡层的表面。
主权项A photonic crystal surface emitting laser, comprising: an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high refractive index portion and a low refractive index portion in an in-plane direction, wherein the band gaps of the plurality of layers made of the first p-type semiconductor are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers, and wherein a third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer.
申请日期2012-05-29
专利号US20120327966A1
专利状态失效
申请号US13/482025
公开(公告)号US20120327966A1
IPC 分类号H01S5/00 | H01L21/00
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/65890
专题半导体激光器专利数据库
作者单位CANON KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
NUMATA, AIHIKO. Photonic crystal surface emitting laser and method of manufacturing the same. US20120327966A1[P]. 2012-12-27.
条目包含的文件
条目无相关文件。
个性服务
推荐该条目
保存到收藏夹
查看访问统计
导出为Endnote文件
谷歌学术
谷歌学术中相似的文章
[NUMATA, AIHIKO]的文章
百度学术
百度学术中相似的文章
[NUMATA, AIHIKO]的文章
必应学术
必应学术中相似的文章
[NUMATA, AIHIKO]的文章
相关权益政策
暂无数据
收藏/分享
所有评论 (0)
暂无评论
 

除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。