Xi'an Institute of Optics and Precision Mechanics,CAS
Photonic crystal surface emitting laser and method of manufacturing the same | |
其他题名 | Photonic crystal surface emitting laser and method of manufacturing the same |
NUMATA, AIHIKO | |
2012-12-27 | |
专利权人 | CANON KABUSHIKI KAISHA |
公开日期 | 2012-12-27 |
授权国家 | 美国 |
专利类型 | 发明申请 |
摘要 | A photonic crystal surface emitting laser, having an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high and a low refractive index portion in an in-plane direction. The band gaps of the plurality of layers are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers. A third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer. |
其他摘要 | 一种光子晶体表面发射激光器,具有形成在基板上的n型包层;形成在n型包覆层上的有源层;电子阻挡层,形成在有源层上并由第二p型半导体制成;形成在电子阻挡层上的二维光子晶体层包括由第一p型半导体制成并具有不同带隙的多个层,并且具有高和低折射率部分。面内方向。多个层的带隙小于第二p型半导体的带隙,并且在多个层的层叠方向上逐步或连续地减小。设置受主掺杂浓度小于第二p型半导体的第三p型半导体,以覆盖电子阻挡层的表面。 |
主权项 | A photonic crystal surface emitting laser, comprising: an n-type cladding layer formed on a substrate; an active layer formed on the n-type cladding layer; an electron blocking layer formed on the active layer and made of a second p-type semiconductor; and a two-dimensional photonic crystal layer that is formed on the electron blocking layer, includes a plurality of layers that are made of a first p-type semiconductor and have different band gaps, and has a high refractive index portion and a low refractive index portion in an in-plane direction, wherein the band gaps of the plurality of layers made of the first p-type semiconductor are smaller than a band gap of the second p-type semiconductor and decrease stepwise or continuously in a lamination direction of the plurality of layers, and wherein a third p-type semiconductor having an acceptor doping concentration smaller than that of the second p-type semiconductor is disposed so as to cover a surface of the electron blocking layer. |
申请日期 | 2012-05-29 |
专利号 | US20120327966A1 |
专利状态 | 失效 |
申请号 | US13/482025 |
公开(公告)号 | US20120327966A1 |
IPC 分类号 | H01S5/00 | H01L21/00 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/65890 |
专题 | 半导体激光器专利数据库 |
作者单位 | CANON KABUSHIKI KAISHA |
推荐引用方式 GB/T 7714 | NUMATA, AIHIKO. Photonic crystal surface emitting laser and method of manufacturing the same. US20120327966A1[P]. 2012-12-27. |
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