Semiconductor laser device comprising a SiGe single crystal substrate

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	Semiconductor laser device comprising a SiGe single crystal substrate
其他题名	Semiconductor laser device comprising a SiGe single crystal substrate
	YOKOTSUKA, TATSUO; NAKAJIMA, MASATO
	1991-12-11
专利权人	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
公开日期	1991-12-11
授权国家	欧洲专利局
专利类型	发明申请
摘要	This invention relates to a semiconductor laser device which comprises a monocrystal substrate (1) of consisting essentially of SiaGe1-a, wherein 0 < a ≦ 0.25, and a compound semiconductor layer which is formed on one side of the substrate and is lattice-matched with the substrate. The compound semiconductor layer includes an Al-free active layer (3) made of GabIn1-bP wherein 0.51 < b ≦ 0.64 and first (2) and second clad (4) layers sandwiching the active layer (3) therebetween wherein said first clad layer (2) is formed on the one side of the substrate (1). The first and second clad layer (2,4) are each made of (Al₀Ga1-o)dIn1-dP, wherein 0.4 ≦ c ≦ 1 and 0.51 < d ≦ 0.64. The laser device of the invention ensures lasing at a short wavelength with good durability.
其他摘要	半导体激光器件本发明涉及一种半导体激光器件，它包括一个基本上由SiaGe1-a组成的单晶衬底（1），其中0
主权项	A semiconductor laser device comprising a monocrystal substrate of consisting essentially of SiaGe 1-a, wherein 0 < a ≦ 0.25, and a compound semiconductor layer formed on one side of the substrate, said compound semiconductor layer being lattice-matched with the substrate, and including an Al-free active layer made of Ga bIn 1-bP wherein 0.51 < b ≦ 0.64 and first and second clad layers sandwiching the active layer therebetween, said first clad layer being formed on said substrate, each clad layer being made of (AlcGa₁₋c) dIn 1-dP, wherein 0.4 ≦ c ≦ 1 and 0.51 < d ≦ 0.64.
申请日期	1991-06-05
专利号	EP0460939A2
专利状态	失效
申请号	EP1991305083
公开（公告）号	EP0460939A2
IPC 分类号	H01S5/00 \| H01S5/02 \| H01S5/042 \| H01S5/223 \| H01S5/323 \| H01S3/19
专利代理人	-
代理机构	SENIOR, ALAN MURRAY
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65840
专题	半导体激光器专利数据库
作者单位	MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
推荐引用方式 GB/T 7714	YOKOTSUKA, TATSUO,NAKAJIMA, MASATO. Semiconductor laser device comprising a SiGe single crystal substrate. EP0460939A2[P]. 1991-12-11.

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