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Optoelectronic device using a disabled tunnel junction for current confinement
其他题名Optoelectronic device using a disabled tunnel junction for current confinement
PETERS, FRANK H.; LEARY, MICHAEL H.; SONG, YOON-KYU; KISH, FREDERICK A. JR.
2003-07-03
专利权人AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
公开日期2003-07-03
授权国家美国
专利类型发明申请
摘要An optoelectronic device such as a vertical cavity surface emitting laser (VCSEL) includes a tunnel junction that conducts a current of holes tunneling into an active region. Tunneling in a selected area of the tunnel junction is disabled to form a current blocking region that confines the current to desired regions. Tunneling can be disabled in the selected area using techniques including but not limited to implanting or diffusing dopants, disrupting crystal structure, or etching to remove part of the tunnel junction.
其他摘要诸如垂直腔表面发射激光器(VCSEL)的光电器件包括隧道结,该隧道结传导隧穿进入有源区的空穴电流。禁止在隧道结的选定区域中的隧穿以形成将电流限制到期望区域的电流阻挡区域。可以使用包括但不限于注入或扩散掺杂剂,破坏晶体结构或蚀刻以去除部分隧道结的技术在所选区域中禁用隧穿。
主权项An optoelectronic device comprising: an active region; a semiconductor region; a tunnel junction between the active region and the semiconductor region; and a current blocking region between the active region and the semiconductor region, wherein the current blocking region operates as a reversed biased PN junction and confines a current between the active region and the semiconductor region to the current through the tunnel junction.
申请日期2001-12-31
专利号US20030123505A1
专利状态授权
申请号US10/040167
公开(公告)号US20030123505A1
IPC 分类号H01S5/042 | H01L33/14 | H01S5/183 | H01S5/20 | H01S5/22 | H01S5/323 | H01L21/00 | H01S5/00
专利代理人-
代理机构-
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/65538
专题半导体激光器专利数据库
作者单位AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式
GB/T 7714
PETERS, FRANK H.,LEARY, MICHAEL H.,SONG, YOON-KYU,et al. Optoelectronic device using a disabled tunnel junction for current confinement. US20030123505A1[P]. 2003-07-03.
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