Methods for fabricating integrated optoelectronic devices

OPT OpenIR > 半导体激光器专利数据库

	Methods for fabricating integrated optoelectronic devices
其他题名	Methods for fabricating integrated optoelectronic devices
	LIU, YUE
	2005-08-04
专利权人	FINISAR CORPORATION
公开日期	2005-08-04
授权国家	美国
专利类型	发明申请
摘要	This disclosure concerns methods for fabrication of integrated high speed optoelectronic devices. In one example of such a method, a device region that includes a top surface and a bottom surface is formed on a top surface of a substrate. The device region may take the form of an optical emitter, such as a VCSEL, or a detector, such as a photodiode. Next, an isolation region is formed that is configured such that the device region is surrounded by the isolation region. A superstrate is then disposed on the top surface of the device region. Finally, a micro-optical device, such as a lens, is placed on a top surface of the superstrate.
其他摘要	本公开涉及用于制造集成高速光电器件的方法。在这种方法的一个示例中，包括顶表面和底表面的器件区域形成在衬底的顶表面上。器件区域可以采用光学发射器（例如VCSEL）或检测器（例如光电二极管）的形式。接下来，形成隔离区域，该隔离区域被配置为使得器件区域被隔离区域围绕。然后将覆板设置在器件区域的顶表面上。最后，将诸如透镜的微光学装置放置在覆板的顶表面上。
主权项	A method for fabricating an optoelectronic device, comprising: forming, upon a top surface of a substrate, a device region that includes a top surface and a bottom surface; forming an isolation region configured such that the device region is surrounded by the isolation region; providing a superstrate on the top surface of the device region, the superstrate including a top surface; and disposing a micro-optical device on the top surface of the superstrate.
申请日期	2004-12-22
专利号	US20050169569A1
专利状态	授权
申请号	US11/022364
公开（公告）号	US20050169569A1
IPC 分类号	H01L31/0203 \| H01L33/48 \| H01S5/02 \| H01S5/042 \| H01S5/183 \| G02B6/12
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/65508
专题	半导体激光器专利数据库
作者单位	FINISAR CORPORATION
推荐引用方式 GB/T 7714	LIU, YUE. Methods for fabricating integrated optoelectronic devices. US20050169569A1[P]. 2005-08-04.