Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor element and manufacture thereof | |
其他题名 | Semiconductor element and manufacture thereof |
SEKII HIROSHI; IMANAKA KOICHI | |
1991-10-23 | |
专利权人 | OMRON CORP |
公开日期 | 1991-10-23 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To reduce the ohmic contact resistance between the uppermost layer of a semiconductor element and an electrode, by forming a PN junction current blocking layer composed of a first semiconductor layer of first conductivity type and a second semiconductor layer of second conductivity type, forming a current path region of second conductivity type from the second semiconductor layer to the first semiconductor layer in a part of the blocking layer, and forming an ohmic contact electrode on almost the whole upper surface of the second semiconductor layer. CONSTITUTION:On a substrate 10 the following are grown in order; a lower clad layer 11, a GaAs active layer 12, a P-AlGaAs upper clad layer 13, an N-AlGaAs layer 14, and a P-AlGaAs cap layer 15. In the central part above the cap layer 15, Zn is diffused down to the clad layer 13 so as to have a desired light emitting diameter, by using Zn diffusion in a quartz tube. A mask using AZ resist is formed only in the part above a P-Zn diffusion region 16; a P-side electrode 18 is vapor-deposited on the whole upper surface of the cap layer 15; the mask is eliminated by lift-off and the like; thus a window 18a for leading out light is formed in the P-side electrode 18. Hence the P-side electrode 18 comes into ohmic contact with the cap layer 15, on the whole surface except the window 18a. |
其他摘要 | 用途:为了降低半导体元件最上层与电极之间的欧姆接触电阻,通过形成由第一导电类型的第一半导体层和第二导电类型的第二半导体层组成的PN结电流阻挡层,形成第二导电类型的电流路径区域在阻挡层的一部分中从第二半导体层到第一半导体层,并且在第二半导体层的几乎整个上表面上形成欧姆接触电极。组成:在基板10上,按顺序生长以下物质;下包层11,GaAs活性层12,P-AlGaAs上包层13,N-AlGaAs层14和P-AlGaAs盖层15.在盖层15上方的中心部分,Zn扩散通过在石英管中使用Zn扩散,向下到包层13以具有所需的发光直径。使用AZ抗蚀剂的掩模仅形成在P-Zn扩散区域16上方的部分中;在盖层15的整个上表面上气相沉积P侧电极18;通过剥离等消除面罩;因此,在P侧电极18中形成用于引出光的窗口18a。因此,P侧电极18在除窗口18a之外的整个表面上与盖层15欧姆接触。 |
主权项 | - |
申请日期 | 1990-02-15 |
专利号 | JP1991237784A |
专利状态 | 失效 |
申请号 | JP1990032575 |
公开(公告)号 | JP1991237784A |
IPC 分类号 | H01S5/00 | H01L33/00 | H01L33/14 | H01L33/40 | H01S5/20 | H01S5/223 | H01S5/40 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64938 |
专题 | 半导体激光器专利数据库 |
作者单位 | OMRON CORP |
推荐引用方式 GB/T 7714 | SEKII HIROSHI,IMANAKA KOICHI. Semiconductor element and manufacture thereof. JP1991237784A[P]. 1991-10-23. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1991237784A.PDF(238KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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