Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus

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	Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
其他题名	Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus
	ITO, SHIGETOSHI; YAMASAKI, YUKIO; KAWAKAMI, TOSHIYUKI
	2002-10-03
专利权人	SHARP KABUSHIKI KAISHA
公开日期	2002-10-03
授权国家	美国
专利类型	发明申请
摘要	In connection with a nitride semiconductor laser device optimal for example for optical pickup and an optical information reproduction apparatus having superior condensation characteristics, the semiconductor laser device includes a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of AlaInbGa1-a-bN stacked thereon having a lattice constant larger than the substrate of nitride semiconductor, and the device is cleaved and thus divided to have a surface serving as a resonator mirror.
其他摘要	关于最佳例如用于光学拾取器的氮化物半导体激光器件和具有优良聚结特性的光学信息再现装置，半导体激光器件包括氮化物半导体衬底，堆叠在其上的氮化物半导体下包层，堆叠有源层在其上，堆叠在其上的氮化物半导体的上包层，以及堆叠在其上的具有比氮化物半导体衬底大的晶格常数的AlaInbGa1-a-bN的接触层，并且该器件被切割并因此被分割成具有用作表面的表面谐振镜。
主权项	A semiconductor laser device comprising a substrate of nitride semiconductor, a lower clad layer of nitride semiconductor stacked thereon, an active layer stacked thereon, an upper clad layer of nitride semiconductor stacked thereon, and a contact layer of Al.sub.aIn.sub.bGa.sub.1-a-bN stacked thereon and having a lattice constant larger than said substrate of nitride semiconductor, wherein the device is cleaved and thus divided to have a surface serving as a resonator mirror.
申请日期	2002-03-22
专利号	US20020141468A1
专利状态	授权
申请号	US10/104931
公开（公告）号	US20020141468A1
IPC 分类号	G11B7/125 \| H01S5/02 \| H01S5/042 \| H01S5/32 \| H01S5/323 \| H01S5/343 \| H01L21/00 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64834
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	ITO, SHIGETOSHI,YAMASAKI, YUKIO,KAWAKAMI, TOSHIYUKI. Semiconductor laser device, method of fabricating the same and optical information reproduction apparatus. US20020141468A1[P]. 2002-10-03.