Junction semiconductor light emitting element

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	Junction semiconductor light emitting element
其他题名	Junction semiconductor light emitting element
	TADATOMO KAZUYUKI; TANIGUCHI KOICHI; ITO AKIRA
	1989-07-17
专利权人	RES DEV CORP OF JAPAN
公开日期	1989-07-17
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To manufacture a light emitting element easily and not only attain high intensity but also improve heat radiation properties, by providing an insulation layer at one side of a semiconductor substrate and forming a groove at least at its layer so that the semiconductor substrate can be exposed, thereby forming semiconductor layers including active layers on the insulation layer respectively in such a way that each groove is coated. CONSTITUTION:An insulating layer is provided by a masking agent on an n-type GaAs substrate B and the insulation layer 1 is equipped with 12 places of circular grooves 7 which expose the substrate B at equal intervals one another. This element allows an n-type AlGaAs clad layer 2, an n-type AlGaAs active layer 3, and a p-type AlGaAs layer 4 to perform an epitaxial growth in order so as to coat each groove 7. Thus, semiconductor layers P having a multilayer structure consisting of double-hetero junction are formed respectively on the insulation layer Then, an electrode E1 as one of electrode materials at a p-side is arranged at the surface of the clad layer 4 with the exception of a top part and also the electrode E2 as one of the electrode materials at an n-side is arranged at the lower face of the substrate B by means of vacuum vaporization and the like. Thus, a semiconductor light emitting element is manufactured.
其他摘要	目的：通过在半导体衬底的一侧设置绝缘层并至少在其层上形成沟槽，使半导体衬底可以容易地制造发光元件，不仅可以获得高强度而且还可以改善散热性能。暴露，从而分别在绝缘层上形成包括有源层的半导体层，使得每个凹槽都被涂覆。组成：在n型GaAs基板B上由掩蔽剂提供绝缘层，并且绝缘层1配备有12个圆形凹槽7位置，它们以相等的间隔彼此暴露基板B.该元件允许n型AlGaAs包层2，n型AlGaAs有源层3和p型AlGaAs层4依次进行外延生长，以便涂覆每个槽7.因此，具有半导体层P在绝缘层1上分别形成由双异质结构成的多层结构。然后，除了顶部之外，在包层4的表面处布置作为p侧的电极材料之一的电极E1。并且，作为n侧的电极材料之一的电极E2通过真空蒸发等设置在基板B的下表面。因此，制造了半导体发光元件。
主权项	-
申请日期	1988-01-05
专利号	JP1989179374A
专利状态	失效
申请号	JP1988000556
公开（公告）号	JP1989179374A
IPC 分类号	H01L33/08 \| H01L33/24 \| H01L33/30 \| H01L33/42 \| H01L33/62 \| H01S5/00 \| H01S5/042 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64829
专题	半导体激光器专利数据库
作者单位	RES DEV CORP OF JAPAN
推荐引用方式 GB/T 7714	TADATOMO KAZUYUKI,TANIGUCHI KOICHI,ITO AKIRA. Junction semiconductor light emitting element. JP1989179374A[P]. 1989-07-17.

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