Mask for manufacturing process of semiconductor device

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	Mask for manufacturing process of semiconductor device
其他题名	Mask for manufacturing process of semiconductor device
	TADATOMO KAZUYUKI; TANIGUCHI KOICHI; TOYAMA OSAMU; IKUNISHI SHIYOUGO
	1991-04-19
专利权人	MITSUBISHI CABLE IND LTD
公开日期	1991-04-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To shorten the etching and diffusion of a semiconductor and the forming processes of a light reflecting surface and a resonator by laminating dielectric films having at least two kinds of refractive indices so as to have specific values respectively to the emission wavelength of the semiconductor. CONSTITUTION:An N-type AlGaAs clad layer 1, an N-type AlGaAs active layer 2 and a P-type AlGaAs layer 3 are epitaxial-grown successively onto an N-type GaAs substrate B, thus forming multilayer structure having a double- hetero junction. A dielectric film composed of SiO2 is shaped onto the top face of the AlGaAs layer 3 through an electron beam evaporation method, etc., so that lambda/4 holds in the emission wavelength lambda of a semiconductor, and a dielectric film consisting of another material and having another refractive index is formed similarly onto the dielectric film so that lambda/4 holds. The process is repeated only by a specified number, and the dielectric films are laminated, and used as a mask. Accordingly, the mask having not only a shielding function required at the time of subsequent etching and diffusion process but also a function as a semiconductor mirror surface is formed.
其他摘要	目的：通过层叠具有至少两种折射率的介电膜，以分别对于半导体的发射波长具有特定值，来缩短半导体的蚀刻和扩散以及光反射表面和谐振器的形成过程。构成：在N型GaAs衬底B上依次外延生长N型AlGaAs覆层1，N型AlGaAs活性层2和P型AlGaAs层3，从而形成具有双异质结。由SiO 2构成的介电膜通过电子束蒸发法等成形在AlGaAs层3的顶面上，使得在半导体的发射波长λ中λ/ 4成立，并且由另一材料并具有另一个折射率，类似地形成在电介质膜上，使得λ/ 4成立。该工艺仅重复指定数量，并且将电介质膜层压，并用作掩模。因此，形成了不仅具有在随后的蚀刻和扩散处理时所需的屏蔽功能而且具有作为半导体镜面的功能的掩模。
主权项	-
申请日期	1989-09-06
专利号	JP1991094482A
专利状态	失效
申请号	JP1989232150
公开（公告）号	JP1991094482A
IPC 分类号	H01L21/302 \| H01L21/3065 \| H01L33/10 \| H01L33/20 \| H01L33/30 \| H01L33/44 \| H01S5/00 \| H01S5/042 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64694
专题	半导体激光器专利数据库
作者单位	MITSUBISHI CABLE IND LTD
推荐引用方式 GB/T 7714	TADATOMO KAZUYUKI,TANIGUCHI KOICHI,TOYAMA OSAMU,et al. Mask for manufacturing process of semiconductor device. JP1991094482A[P]. 1991-04-19.

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