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Self-pulsation type semiconductor laser device
其他题名Self-pulsation type semiconductor laser device
KAN, YASUO; TANI, KENTARO; TAKEOKA, TADASHI; SUGAHARA, AKIYOSHI
1997-07-02
专利权人SHARP KABUSHIKI KAISHA
公开日期1997-07-02
授权国家欧洲专利局
专利类型发明申请
摘要A self-pulsation type semiconductor laser device includes a semiconductor substrate of a first conductive type and a multilayered structure including at least an active layer provided on the semiconductor substrate. The multilayered structure includes a first cladding layer of the first conductive type provided below the active layer, a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer and a saturable absorbing film provided over the second cladding layer. The saturable absorbing film includes an accumulation region for accumulating photoexcited carriers. The accumulating region is provided apart from a surface of the second cladding layer.
其他摘要一种自脉冲型半导体激光器件,包括第一导电类型的半导体衬底和至少包括设置在半导体衬底上的有源层的多层结构。该多层结构包括设置在有源层下方的第一导电类型的第一包层,第二导电类型的第二包层,其具有设置在有源层上方的条纹脊部分和设置在第二包层上的可饱和吸收膜。可饱和吸收膜包括用于累积光激发载流子的累积区域。累积区域与第二包层的表面分开设置。
主权项A self-pulsation type semiconductor laser device comprising: a semiconductor substrate of a first conductive type; and a multilayered structure including at least an active layer provided on the semiconductor substrate, wherein the multilayered structure includes: a first cladding layer of the first conductive type provided below the active layer; a second cladding layer of a second conductive type having a striped ridge portion provided above the active layer; and a saturable absorbing film provided over the second cladding layer, the saturable absorbing film including an accumulation region for accumulating photoexcited carriers, the accumulating region being provided apart from a surface of the second cladding layer.
申请日期1996-12-23
专利号EP0782230A1
专利状态失效
申请号EP1996309435
公开(公告)号EP0782230A1
IPC 分类号H01S5/00 | H01S5/065 | H01S5/22 | H01S5/223 | H01S3/19
专利代理人-
代理机构SUCKLING, ANDREW MICHAEL
文献类型专利
条目标识符http://ir.opt.ac.cn/handle/181661/64661
专题半导体激光器专利数据库
作者单位SHARP KABUSHIKI KAISHA
推荐引用方式
GB/T 7714
KAN, YASUO,TANI, KENTARO,TAKEOKA, TADASHI,et al. Self-pulsation type semiconductor laser device. EP0782230A1[P]. 1997-07-02.
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