Liquid phase epitaxial growing device

OPT OpenIR > 半导体激光器专利数据库

	Liquid phase epitaxial growing device
其他题名	Liquid phase epitaxial growing device
	YOSHIKAWA MITSUO; ITOU MICHIHARU; MARUYAMA KENJI; TAKIGAWA HIROSHI
	1983-08-16
专利权人	FUJITSU KK
公开日期	1983-08-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To offer a growing device which can obtain an Hg1-xCdxTe crystal layer wherein Hg which is an easy evaporation constituent is contained in a fixed amount with good reproducibility, by regulating the flow so that the evaporation constituent from the vessel containing the easy evaporation constituent passes over a slide member. CONSTITUTION:The Hg vapor evaporated from the easy evaporation Hg contained in the vessel 8 provided in the upper stream side of gas does not pass through the lower part of a support base 1 resulting in emission to the outside by providing a partition member 21, while the vapor flow is regulated in the direction shown by the dot line B and flows. Thereby, the upper part of a liquid reservoir 5 wherein the Hg1-xCdxTe material 6 is contained becomes filled with the easy evaporation Hg vapor, and then the vapor pressure of the easy evaporation Hg in a reaction tube and the dissociation pressure of the easy evaporation Hg in the Hg1-xCdxTe liquid phase 6 in the liquid reservoir 5 reach apporox. an equilibrium state. Therefore, the composition of the liquid phase 6 does not vary, and accordingly the Hg1-xCdxTe epitaxial srystal layer of stable composition can be obtained.
其他摘要	目的：提供一种能够获得Hg1-xCdxTe晶体层的生长装置，其中Hg是一种易于蒸发的成分，通过调节流量以固定的量包含，具有良好的再现性，使得来自容器的蒸发成分容易蒸发成分通过滑动构件。组成：从设置在气体上游侧的容器8中容纳的易蒸发Hg蒸发的Hg蒸气不通过支撑基座1的下部，导致通过提供分隔构件21发射到外部，同时蒸汽流量沿点线B所示的方向调节并流动。由此，容纳Hg1-xCdxTe材料6的储液器5的上部充满易蒸发的Hg蒸气，然后在反应管中容易蒸发Hg的蒸气压和易蒸发的离解压力。液体贮存器5中的Hg1-xCdxTe液相6中的Hg达到混合物。平衡状态。因此，液相6的组成不变，因此可以获得稳定组成的Hg1-xCdxTe外延晶体层。
主权项	-
申请日期	1982-02-12
专利号	JP1983138038A
专利状态	失效
申请号	JP1982021499
公开（公告）号	JP1983138038A
IPC 分类号	H01L31/0264 \| C30B19/04 \| H01L21/208 \| H01L21/368 \| H01S5/00 \| H01L31/04 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64546
专题	半导体激光器专利数据库
作者单位	FUJITSU KK
推荐引用方式 GB/T 7714	YOSHIKAWA MITSUO,ITOU MICHIHARU,MARUYAMA KENJI,et al. Liquid phase epitaxial growing device. JP1983138038A[P]. 1983-08-16.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
JP1983138038A.PDF（104KB）	专利		开放获取	CC BY-NC-SA	请求全文