Vertical cavity laser diode

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	Vertical cavity laser diode
其他题名	Vertical cavity laser diode
	OTSUBO, KOJI, C/O FUJITSU LIMITED; SHOJI, HAJIME, C/O FUJITSU LIMITED
	1994-11-02
专利权人	FUJITSU LIMITED
公开日期	1994-11-02
授权国家	欧洲专利局
专利类型	发明申请
摘要	A planar vertical cavity laser diode includes a substrate (1), a first multilayer structure (2) (first distributed Biagg reflector) on the substrate and formed of an alternate stacking of a first epitaxial layer and a second epitaxial layer of doped semiconductor materials, a cavity structure (3) provided on the first multilayer structure and including an undoped active layer for producing optical radiation as a result of stimulated emission, a second multilayer structure (5) (second DBR) provided on the cavity structure and formed of an alternate stacking of a third epitaxial layer and a fourth epitaxial layer of undoped semicondotor materials, a first electrode structure (19₁,10₂) on a bottom surface of the substrate, a second electrode structure (8₁,8₂) for injecting carriers to said active layer via said cavity structure, an optical passage (anti-reflection coating, 9) provided in one of the first and second electrode structures for allowing an optical beam to pass therethrough; a a current path structure (3₇) provided between the second electrode structure and the active layer for providing a passage of the carriers, a current confinement structure (4) for confining the passage of the carriers such that said carriers flow along a path generally coincident to an optical path of the optical beam, and a conductive region (7,11) provided in contact with said the electrode structure for causing the carriers to flow therethrough, wherein the conductive region is provided so as to avoid the optical path.
其他摘要	平面垂直腔激光二极管包括衬底（1），在衬底上的第一多层结构（2）（第一分布式Biagg反射器），并且由第一外延层和掺杂半导体材料的第二外延层的交替堆叠形成，腔结构（3）设置在第一多层结构上并包括用于产生受激发射的光辐射的未掺杂有源层，第二多层结构（5）（第二DBR）设置在腔结构上并由替代形成堆叠第三外延层和第四外延层的未掺杂半导体材料，第一电极结构（19 1,10 2）在基板的底表面上，第二电极结构（8 1，8 2）用于通过所述腔结构将载流子注入所述有源层，在第一和第二电极结构之一中提供光学通道（抗反射涂层，9），以允许光束通过; aa电流路径结构（3'），设置在第二电极结构和有源层之间，用于提供载流子的通道，电流限制结构（4），用于限制载流子的通过，使得所述载流子沿着通常重合的路径流动。光束的光路，以及与所述电极结构接触的导电区域（7,11），用于使载流子从中流过，其中提供导电区域以避免光学路径。
主权项	A planar laser diode for emitting an optical beam in the direction substantially perpendicular to epitaxial layers, comprising: a substrate (1) of a semiconductor material doped to a first conductivity type and having upper and lower major surfaces; a first multilayer structure (2) provided on said substrate, said first multilayer structure comprising an alternate stacking of a first epitaxial layer (2₁) having a first refractive index and a second epitaxial layer (2₂) having a second refractive index, each of said first and second epitaxial layers comprising a semiconductor material doped to said first conductivity type, said first multilayer structure having upper and lower major surfaces and acting as a reflector for reflecting an optical beam in the direction perpendicular to said upper and lower major surfaces of said first multilayer structure; a cavity structure (3) having upper and lower major surfaces and provided on said upper major surface of said first multilayer structure, said cavity structure including an undoped active layer (3₄) having upper and lower major surfaces for producing optical radiation as a result of stimulated emission therein, said cavity structure emitting said optical radiation along an optical path generally perpendicularly to said upper and lower major surfaces of said cavity structure; a second multilayer structure (5) provided on said upper major surface of said cavity structure, said second multilayer structure comprising an alternate stacking of a third epitaxial layer (5₁) having a third refractive index and a fourth epitaxial layer (5₂) having a fourth refractive index, each of said third and fourth epitaxial layers comprising an undoped semiconductor material, said second multilayer structure having upper and lower major surfaces and acting as a reflector for reflecting an optical beam in the direction perpendicular to said upper and lower major surfaces of said second multilayer structure; first electrode means (10₁, 10₂) provided on the lower major surface of said substrate for injecting first type carriers to said active layer via said first multilayer structure; second electrode means (8₁, 8₂) for injecting second type carriers to said active layer via said cavity structure; optical passage means (9) provided in one of said first and second electrode means for allowing said optical beam to pass therethrough; a current path structure (3₇) of a semiconductor material forming a part of said cavity structure and provided between said second electrode means and said active layer for providing a passage of said second type carriers from said second electrode means to said active layer; and current confinement means (4) provided between said second electrode means and said active layer for confining said passage of said second type carriers flowing from said second electrode means to said active layer through said contact structure, such that said second type carriers flow along a path generally coincident to said optical path of said optical beam; characterized in that said planar laser diode further comprises: a conductive region (7) of a semiconductor material doped to a second conductivity type and provided in contact with said second electrode means for causing said second type carriers to flow therethrough, said conductive region being provided so as to avoid said optical path.
申请日期	1994-04-28
专利号	EP0622876A1
专利状态	失效
申请号	EP1994303072
公开（公告）号	EP0622876A1
IPC 分类号	H01L33/06 \| H01L33/10 \| H01L33/14 \| H01L33/30 \| H01L33/40 \| H01L33/46 \| H01S5/00 \| H01S5/183 \| H01S3/085
专利代理人	-
代理机构	STEBBING, TIMOTHY CHARLES
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64536
专题	半导体激光器专利数据库
作者单位	FUJITSU LIMITED
推荐引用方式 GB/T 7714	OTSUBO, KOJI, C/O FUJITSU LIMITED,SHOJI, HAJIME, C/O FUJITSU LIMITED. Vertical cavity laser diode. EP0622876A1[P]. 1994-11-02.