A method for the production of a semiconductor laser device

OPT OpenIR > 半导体激光器专利数据库

	A method for the production of a semiconductor laser device
其他题名	A method for the production of a semiconductor laser device
	MATSUMOTO, MITSUHIRO; SASAKI, KAZUAKI; KONDO, MASAKI
	1992-02-05
专利权人	SHARP KABUSHIKI KAISHA
公开日期	1992-02-05
授权国家	欧洲专利局
专利类型	发明申请
摘要	There is provided a method for the production of a semiconductor laser device which emits laser light from a facet (307). The method includes the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), which layer (309) has a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device.
其他摘要	提供一种制造半导体激光器件的方法，该半导体激光器件从刻面（307）发射激光。该方法包括以下步骤：在半导体衬底（301）上生长包含用于激光振荡的有源层（304）的多层结构，以形成晶片;蚀刻多层结构，形成垂直于光波导方向的条纹槽（320），形成一对谐振器面（307）;使小平面（307）与含硫溶液（308）接触;对刻面（307）进行热处理;在小平面（307）的表面上生长半导体层（309），该层（309）的带隙大于有源层（304）的带隙;沿着条纹槽（320）切割晶片，得到半导体激光器件。
主权项	A method for the production of a semiconductor laser device which emits laser light from a facet, comprising the steps of: growing a multi-layered structure containing an active layer (304) for laser oscillation on a semiconductor substrate (301) to form a wafer; etching the multi-layered structure to form a striped groove (320) perpendicular to the direction of an optical waveguide, resulting in a pair of resonator facets (307); bringing the facets (307) into contact with a sulfur-containing solution (308); subjecting the facets (307) to heat treatment; growing a semiconductor layer (309) on the surface of the facets (307), said layer (309) having a band gap greater than that of the active layer (304); and cleaving the wafer along the striped groove (320) to obtain a semiconductor laser device.
申请日期	1991-08-01
专利号	EP0469900A2
专利状态	失效
申请号	EP1991307060
公开（公告）号	EP0469900A2
IPC 分类号	H01S5/00 \| H01L21/314 \| H01S5/02 \| H01S5/028 \| H01S5/16 \| H01L33/00 \| H01S3/025 \| H01S3/19
专利代理人	-
代理机构	WHITE, MARTIN DAVID
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64420
专题	半导体激光器专利数据库
作者单位	SHARP KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	MATSUMOTO, MITSUHIRO,SASAKI, KAZUAKI,KONDO, MASAKI. A method for the production of a semiconductor laser device. EP0469900A2[P]. 1992-02-05.

条目包含的文件
文件名称/大小	文献类型	版本类型	开放类型	使用许可
EP0469900A2.PDF（421KB）	专利		开放获取	CC BY-NC-SA	请求全文