Xi'an Institute of Optics and Precision Mechanics,CAS
| Semiconductor laser device with single wavelength and manufacture thereof | |
| 其他题名 | Semiconductor laser device with single wavelength and manufacture thereof |
| ITAYA YOSHIO; MOTOSUGI TSUNEJI | |
| 1985-10-30 | |
| 专利权人 | NIPPON DENSHIN DENWA KOSHA |
| 公开日期 | 1985-10-30 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To enable oscillation with a single wavelength not by depending on the position of a cleavage surface by a method wherein one surface constituting the resonator of a distributed feedback type laser is made non-reflection type, and the other surface is provided with a high reflectance. CONSTITUTION:One side 7 of surfaces vertical to a layer 2 having a diffraction grating with a period LAMBDA=mlambda/2neff (m: integer, lambda: oscillation wavelength, nff: the effective refractive index of the active layer 2) is coated with a non-reflection coating 10, and the surface vertical to the other layer 2' is coated with a dielectric 11, further, a high refletion film 12 is added. Or, both the surfaces 7 and 7' vertical to the layer 2 are coated with said coating, and the film 12 is added to one surface. In such a case that the reflection from one surface is 0 and the reflectance of the other surface is 1, the titled device oscillating with a single wavelength can be obtained without depending on the position of a cleavage surface except that the position of the cleavage surface is theta=3pi/2. Besides, the gain necessary for oscillation reduces, and the reduction in threshold value can be contrived. |
| 其他摘要 | 目的：通过一种方法，使单个波长的振荡不依赖于解理面的位置，其中构成分布式反馈型激光器的谐振器的一个表面是非反射型的，另一个表面具有高的反射率。组成：垂直于第2层的表面的一侧7具有周期LAMBDA = mlambda / 2neff（m：整数，λ：振荡波长，nff：有源层2的有效折射率）的衍射光栅。非反射涂层10和垂直于另一层2'的表面涂有电介质11，此外，还添加了高反射膜12。或者，垂直于层2的表面7和7'都涂覆有所述涂层，并且将膜12添加到一个表面上。在一个表面的反射为0并且另一个表面的反射率为1的情况下，可以获得以单一波长振荡的标题装置，而不依赖于解理表面的位置，除了解理表面的位置。是theta = 3pi / 2。此外，振荡所需的增益减小，并且可以设计阈值的减小。 |
| 主权项 | - |
| 申请日期 | 1984-04-12 |
| 专利号 | JP1985216595A |
| 专利状态 | 失效 |
| 申请号 | JP1984071788 |
| 公开（公告）号 | JP1985216595A |
| IPC 分类号 | H01S5/00 | H01S5/028 | H01S5/12 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/64391 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | NIPPON DENSHIN DENWA KOSHA |
| 推荐引用方式 GB/T 7714 | ITAYA YOSHIO,MOTOSUGI TSUNEJI. Semiconductor laser device with single wavelength and manufacture thereof. JP1985216595A[P]. 1985-10-30. |
| 条目包含的文件 | ||||||
| 文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
| JP1985216595A.PDF（193KB） | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 | ||
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