Xi'an Institute of Optics and Precision Mechanics,CAS
| Liquid phase epitaxial growth apparatus | |
| 其他题名 | Liquid phase epitaxial growth apparatus |
| ITOU MICHIHARU; YOSHIKAWA MITSUO; HAMASHIMA SHIGEKI | |
| 1982-06-24 | |
| 专利权人 | FUJITSU KK |
| 公开日期 | 1982-06-24 |
| 授权国家 | 日本 |
| 专利类型 | 发明申请 |
| 摘要 | PURPOSE:To take out a substrate easily after epitaxial growth by providing a waste storage, difference in level and so forth to a supporting stand. CONSTITUTION:A storage 13 to store liquid phase which is to have epitaxial growth, a supporting stand 11 which has a storage 14 into which disused liquid phase after epitaxial growth is wasted, a through hole 17 which receives overflowed liquid phase from the storage 13 and a sliding member 12 which has a concave in which a substrate 15 is housed are provided. Then the sliding member 12 is traveled on the supporting stand 11 and the substrate 15 is given a face-to-face contact with the liquid phase so that the epitaxial growth is made. After that the substrate 15A on which the epitaxial growth has been made is dropped at the portion with difference in level of the supporting stand 11 and is taken out. |
| 其他摘要 | 用途：通过在支撑架上提供废物存储，水平差异等，在外延生长后轻松取出基板。组成：一个存储器13，用于存储具有外延生长的液相，支撑架11，其具有存储器14，外延生长后废弃的液相被浪费，存储器17接收来自存储器13的溢出的液相和滑动构件12设置有凹部，基板15容纳在该凹部中。然后，滑动构件12在支撑架11上行进，并且基板15与液相面对面接触，从而进行外延生长。之后，在其上形成外延生长的衬底15A在支撑架11的水平差的部分处下落并被取出。 |
| 主权项 | - |
| 申请日期 | 1980-12-17 |
| 专利号 | JP1982102013A |
| 专利状态 | 失效 |
| 申请号 | JP1980179587 |
| 公开（公告）号 | JP1982102013A |
| IPC 分类号 | H01L31/0264 | C30B19/06 | H01L21/208 | H01L21/368 | H01S5/00 | H01L31/04 | H01S3/18 |
| 专利代理人 | - |
| 代理机构 | - |
| 文献类型 | 专利 |
| 条目标识符 | http://ir.opt.ac.cn/handle/181661/64343 |
| 专题 | 半导体激光器专利数据库 |
| 作者单位 | FUJITSU KK |
| 推荐引用方式 GB/T 7714 | ITOU MICHIHARU,YOSHIKAWA MITSUO,HAMASHIMA SHIGEKI. Liquid phase epitaxial growth apparatus. JP1982102013A[P]. 1982-06-24. |
| 条目包含的文件 | 条目无相关文件。 | |||||
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