Semiconductor laser for pumping light amplifier and method for making the semiconductor laser

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	Semiconductor laser for pumping light amplifier and method for making the semiconductor laser
其他题名	Semiconductor laser for pumping light amplifier and method for making the semiconductor laser
	NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K.
	1997-01-15
专利权人	MITSUBISHI DENKI KABUSHIKI KAISHA
公开日期	1997-01-15
授权国家	欧洲专利局
专利类型	发明申请
摘要	A semiconductor laser includes a first conductivity type semiconductor substrate (1); a first conductivity type cladding layer (2) disposed on the semiconductor substrate; an active layer (3) disposed on the first conductivity type cladding layer for producing light having a wavelength λ; a light waveguide structure (4,6,8) including a second conductivity type cladding layer (6) disposed on the active layer; a first conductivity type current blocking layer (8) disposed on, contacting, and confining the light waveguide structure and containing an element absorbing light having the wavelength λ; and a second conductivity type contacting layer (15) contacting the light waveguide structure and the current blocking layer. A method of making a semiconductor laser includes successively growing on a first conductivity type semiconductor substrate (1) a first conductivity type cladding layer (2), an active layer (3) for producing light having a wavelength λ, and a second conductivity type cladding layer (6); etching and removing part of the second conductivity type cladding layer to form a light waveguide structure (4,6,8); growing a first conductivity type current blocking layer (8) on and contacting the second conductivity type cladding layer, contacting and confining the light waveguide structure, and containing an element absorbing light having the wavelength λ; and growing a second conductivity type contacting layer (15) on the current blocking layer and the light waveguide structure.
其他摘要	半导体激光器包括第一导电类型半导体衬底（1）;第一导电型包层（2）设置在半导体衬底上;设置在第一导电型包层上的有源层（3），用于产生波长λ的光;光波导结构（4,6,8），包括设置在有源层上的第二导电型包层（6）;第一导电型电流阻挡层（8），设置在光波导结构上，接触并限制光波导结构，并包含吸收波长为λ的光的元件;和接触光波导结构和电流阻挡层的第二导电类型接触层（15）。一种制作方法半导体激光器包括在第一导电类型半导体衬底（1）上连续生长第一导电类型包层（2），用于产生具有波长λ的光的有源层（3），以及第二导电类型包层（6）;蚀刻并去除部分第二导电型包层，形成光波导结构（4,6,8）;在第二导电型包层上生长第一导电型电流阻挡层（8），接触并限制光波导结构，并包含吸收波长为λ的光的元件;在电流阻挡层和光波导上生长第二导电类型接触层（15）结构体。
主权项	A Semiconductor laser comprising: a first conductivity type semiconductor substrate; a first conductivity type cladding layer disposed on the semiconductor substrate; an active layer disposed on the first conductivity type cladding layer for producing light having a wavelength λ; a light waveguide structure comprising a second conductivity type cladding layer disposed on the active layer; a first conductivity type current blocking layer disposed on, contacting, and confining the light waveguide structure and containing an element absorbing light having the wavelength λ; a second conductivity type contacting layer contacting the light waveguide structure and the current blocking layer; and first and second electrodes respectively disposed on the substrate and the contacting layer.
申请日期	1996-06-27
专利号	EP0753915A2
专利状态	失效
申请号	EP1996110430
公开（公告）号	EP0753915A2
IPC 分类号	H01S5/00 \| H01S5/20 \| H01S5/22 \| H01S5/223 \| H01S5/323 \| H01S3/19 \| H01L33/00
专利代理人	-
代理机构	KUHNEN, WACKER & PARTNER
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64324
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KABUSHIKI KAISHA
推荐引用方式 GB/T 7714	NAGAI, YUTAKA, C/O MITSUBISHI DENKI K.K.. Semiconductor laser for pumping light amplifier and method for making the semiconductor laser. EP0753915A2[P]. 1997-01-15.

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