External resonator type laser

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	External resonator type laser
其他题名	External resonator type laser
	HANDA YUICHI; NISHIMURA MICHIYO
	1991-06-20
专利权人	キヤノン株式会社
公开日期	1991-06-20
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve a semiconductor laser in both wavelength selectively and diffraction efficiency and to facilitate the manufacture of it by a method wherein a polarizing element is interposed between the semiconductor laser and a grating. CONSTITUTION:A part of a light wave emitted from a semiconductor laser 1 is emitted from an edge coated with an AR coat 6, and is incident on a blaze grating 4 passing through a coupling lens 2 and a half-wave plate 5. At this point, the intensity of a light wave between the coupling lens 2 and the half-wave plate 5 is distributed in such manner that its electrical field E1 faces in the minor axis direction of an elliptical beam. On the other hand, the intensity of a light wave that has passed through the half-wave plate 5 is distributed in such manner that its electrical field E2 is rotated by an angle of 90 deg. in a polarization direction and faces in the major axis direction of the elliptical beam. As mentioned above, the electrical field of a light wave incident on the grating 4 is parallel with the incident plane of the grating 4 or a light wave is incident on the grating 4 as p-polarized. A light wave diffracted as p-polarized is rotated by an angle of 90 deg. in a polarization direction through the half-wave plate 5 and has the same polarization direction that it has when emitted, which is recoupled with the semiconductor laser By this setup, a grating can be improved in both diffraction efficiency and wavelength selectivity.
其他摘要	目的：改进半导体激光器的波长选择性和衍射效率，并通过一种方法制造半导体激光器，其中在半导体激光器和光栅之间插入偏振元件。组成：从半导体激光器1发出的光波的一部分从涂有AR涂层6的边缘发射，并入射到通过耦合透镜2和半波片5的闪耀光栅4上。此时，耦合透镜2和半波片5之间的光波强度以其电场E1面向椭圆光束的短轴方向的方式分布。另一方面，已经通过的光波的强度半波片5以其电场E2旋转90度角的方式分布。在极化方向上并且面向椭圆形光束的长轴方向。如上所述，入射在光栅4上的光波的电场与光栅4的入射平面平行，或者光波作为p偏振入射到光栅4上。将作为p偏振衍射的光波旋转90度的角度。通过半波片5在偏振方向上具有与发射时相同的偏振方向，并与半导体激光器1重新耦合。通过这种设置，可以改善光栅的衍射效率和波长选择性。
主权项	-
申请日期	1989-10-31
专利号	JP1991145174A
专利状态	失效
申请号	JP1989282044
公开（公告）号	JP1991145174A
IPC 分类号	H01S3/08 \| H01S3/1055 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64284
专题	半导体激光器专利数据库
作者单位	キヤノン株式会社
推荐引用方式 GB/T 7714	HANDA YUICHI,NISHIMURA MICHIYO. External resonator type laser. JP1991145174A[P]. 1991-06-20.

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