Xi'an Institute of Optics and Precision Mechanics,CAS
Semiconductor laser device and modulation method thereof | |
其他题名 | Semiconductor laser device and modulation method thereof |
WATANABE HITOSHI; FUJIWARA MASATOSHI; NAKAJIMA YASUO; SAKAKIBARA YASUSHI | |
1991-04-25 | |
专利权人 | MITSUBISHI ELECTRIC CORP |
公开日期 | 1991-04-25 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To prevent a fluctuation of an oscillation wavelength by embedding an active layer near a laser beam emission region and forming clad layers of a p-type and an n-type with the activated layer in between to provide a laser modulation region where currents can be injected independently. CONSTITUTION:Active layers 3a are embedded on the both sides of an active layer 1a of a laser beam emission region P-type clad layers 3b thereon and n-type clad layers 3c thereunder are formed respectively to provide laser modulation regions 3. When the currents injected through contacts 4 into the regions 3 are modulated, the refractive indexes of the layers 3a vary and an optical output signal subjected to predetermined modulation is obtained by changing the light intensity distribution from the layer 1a. Since the modulation can be thus performed keeping the currents injected into the laser beam emission region 1 via contacts 2 constant, the modulation signal having a good quality and having no fluctuation of its oscillation wavelength can be obtained. |
其他摘要 | 用途:通过在激光束发射区域附近嵌入有源层并在其间形成激活层来形成p型和n型包层,以防止振荡波长的波动,从而提供电流可以的激光调制区域独立注射。组成:有源层3a嵌在激光束发射区域1的有源层1a的两侧。其上的P型包层3b和其下的n型包层3c分别形成,以提供激光调制区域3。通过触点4注入区域3的电流被调制,层3a的折射率变化,并且通过改变来自层1a的光强度分布获得经过预定调制的光输出信号。由于可以通过保持通过触点2注入激光束发射区域1的电流恒定来执行调制,因此可以获得具有良好质量并且其振荡波长没有波动的调制信号。 |
主权项 | - |
申请日期 | 1989-09-13 |
专利号 | JP1991101182A |
专利状态 | 失效 |
申请号 | JP1989237915 |
公开(公告)号 | JP1991101182A |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S5/06 | H01S3/103 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64282 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI ELECTRIC CORP |
推荐引用方式 GB/T 7714 | WATANABE HITOSHI,FUJIWARA MASATOSHI,NAKAJIMA YASUO,et al. Semiconductor laser device and modulation method thereof. JP1991101182A[P]. 1991-04-25. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1991101182A.PDF(141KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
除非特别说明,本系统中所有内容都受版权保护,并保留所有权利。
修改评论