Xi'an Institute of Optics and Precision Mechanics,CAS
110 oriented group iv-vi semiconductor structure, and method for making and using the same | |
其他题名 | 110 oriented group iv-vi semiconductor structure, and method for making and using the same |
ZHISHENG, SHI | |
2006-10-25 | |
专利权人 | ZHISHENG, SHI |
公开日期 | 2006-10-25 |
授权国家 | 欧洲专利局 |
专利类型 | 发明申请 |
摘要 | A method of growing and fabricating a group IV-VI semiconductor structure, for use in fabricating devices. In one embodiment, the group IV-VI semiconductor structure produced by the method of the present invention includes a group IV-IV material grown on a selected orientation of [110]. The devices fabricated can be a laser, detector, solar cell, thermal electrical cooling devices, etc. A laser device produced according to the present method will have a low threshold due to t he lift-off of the energy degeneracy and low defect density. Growth on the [110] orientation also allows epitaxial growth of the semiconductor structure on a dissimilar substrate, which could improve the thermal dissipation and thus increase the operating temperature of the laser device. |
其他摘要 | 一种生长和制造IV-VI族半导体结构的方法,用于制造器件。在一个实施方案中,通过本发明的方法制备的IV-VI族半导体结构包括在[110]的选定取向上生长的IV-IV族材料。制造的器件可以是激光器,检测器,太阳能电池,热电冷却装置等。根据本方法生产的激光器件由于能量简并性和低缺陷密度的提升而具有低阈值。 [110]取向上的生长还允许半导体结构在不同衬底上的外延生长,这可以改善热耗散并因此提高激光器件的工作温度。 |
主权项 | An electronic device comprising: a substrate having a growing surface with a [110] orientation; and a semiconductor structure having a [110] orientation comprising a group IVVI material epitaxially grown on the growing surface of the substrate such that the orientation of the group IVVI material substantially follows the [110] orientation of the growing surface of the substrate. |
申请日期 | 2005-02-04 |
专利号 | EP1714359A2 |
专利状态 | 失效 |
申请号 | EP2005722781 |
公开(公告)号 | EP1714359A2 |
IPC 分类号 | H01S5/00 | H01L29/00 | H01L47/00 | H01S5/32 |
专利代理人 | - |
代理机构 | FISCHER, FRANZ |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64160 |
专题 | 半导体激光器专利数据库 |
作者单位 | ZHISHENG, SHI |
推荐引用方式 GB/T 7714 | ZHISHENG, SHI. 110 oriented group iv-vi semiconductor structure, and method for making and using the same. EP1714359A2[P]. 2006-10-25. |
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