Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same

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	Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same
其他题名	Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same
	YOO, BYUENG-SU; KWON, O-KYUN; JU, YOUNG-GU
	2002-06-20
专利权人	INTELLECTUAL DISCOVERY CO. LTD.
公开日期	2002-06-20
授权国家	美国
专利类型	发明申请
摘要	Disclosed is a surface-emitting laser device which eliminates an absorption loss of a p-type doped layer and reduces a scattering loss in a mirror layer and a carrier loss due to a current induction, comprising a first conductive type of semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.
其他摘要	本发明公开了一种表面发射激光器件，其消除了p型掺杂层的吸收损耗并减少了镜面层中的散射损耗和由于电流感应引起的载流子损失，包括第一导电类型的半导体衬底;底部镜面层，形成在半导体衬底上，并由第一导电类型的半导体层构成;底部镜层上形成有源层;形成在有源层上并具有大于有源层的能隙的电子泄漏阻挡层;电子泄漏阻挡层上形成的电流感应层和第二导电类型的半导体层;电流延伸层，形成在电流感应层上，由第二导电类型的半导体层构成;形成在电流延伸层上的顶部镜面层，其中顶部镜面层包括未掺杂的中心部分，并且其两端具有第二导电类型的掺杂剂扩散区域。
主权项	A surface-emitting laser device, comprising: a first conductive type OF semiconductor substrate; a bottom mirror layer formed on the semiconductor substrate and composed of a first conductive type of semiconductor layer; an active layer formed on the bottom mirror layer; an electron leakage barrier layer formed on the active layer and having an energy gap larger than the active layer; a current induction layer formed on the electron leakage barrier layer and a second conductive type of semiconductor layer; a current extension layer formed on the current induction layer and composed of the second conductive type of semiconductor layer; and a top mirror layer formed on the current extension layer, wherein the top mirror layer includes undoped center portion and its both end having the second conductive type of dopant diffusion region.
申请日期	2001-04-25
专利号	US20020075922A1
专利状态	失效
申请号	US09/842521
公开（公告）号	US20020075922A1
IPC 分类号	H01S5/30 \| H01S5/183 \| H01S5/20 \| H01S5/343 \| H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64136
专题	半导体激光器专利数据库
作者单位	INTELLECTUAL DISCOVERY CO. LTD.
推荐引用方式 GB/T 7714	YOO, BYUENG-SU,KWON, O-KYUN,JU, YOUNG-GU. Long wavelength surface-emitting semiconductor laser device and method for manufacturing the same. US20020075922A1[P]. 2002-06-20.