Xi'an Institute of Optics and Precision Mechanics,CAS
Light emitting element and manufacture thereof | |
其他题名 | Light emitting element and manufacture thereof |
KOBAYASHI MASAMICHI; NAKA HIROSHI; SAWAI MASAAKI; ICHIKI MASAHIRO | |
1986-02-10 | |
专利权人 | HITACHI LTD |
公开日期 | 1986-02-10 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To enhance the manufacturing yield by disposing the peripheral edge except part of a cleaved surface of the uppermost layer of an electrode in coincidence with or inside the peripheral edge of the lower layer for supporting the uppermost layer. CONSTITUTION:A laser chip is formed of a multilayer grown layer 6 sequentially formed with a buffer layer 2 made of an N type InP, an active layer 3 made of InGaAsP, a clad layer 4 made of P type InP, and a cap layer 5 made of P type InGaAsP in a stripe shape on the main surface of an N type InP substrate A blocking layer 7 made of P type InP, a buried layer 8 made of N type InP, and a cap layer 9 made of InGaAs are buried at both sides of the layer 6. The main surface side of the substrate 1 is coated with an insulating film 10 except the electrode contact region of the layer 6. An Au layer 12 of the upper layer of an anode electrode 13 is effectively placed on a Cr layer 1 Thus, the layer 12 is not short-circuited due to the contact with a P-N junction presented on the peripheral surface of the laser chip. |
其他摘要 | 用途:通过设置除了电极最上层的裂开表面的一部分之外的外围边缘与下层的外围边缘重合或在其内部以支撑最上层来提高制造产量。组成:激光芯片由多层生长层6形成,该多层生长层6顺序形成有由N型InP制成的缓冲层2,由InGaAsP制成的有源层3,由P型InP制成的包层4和盖层5在N型InP衬底1的主表面上由条形的P型InGaAsP制成。由P型InP制成的阻挡层7,由N型InP制成的掩埋层8和由InGaAs制成的盖层9。除了层6的电极接触区域之外,基板1的主表面侧涂覆有绝缘膜10.阳极电极13的上层的Au层12被有效地放置在基板1的主表面侧上。因此,由于与激光器芯片的外围表面上呈现的PN结接触,层12不会短路。 |
主权项 | - |
申请日期 | 1984-07-20 |
专利号 | JP1986029184A |
专利状态 | 失效 |
申请号 | JP1984149533 |
公开(公告)号 | JP1986029184A |
IPC 分类号 | H01L27/15 | H01S5/00 | H01S5/042 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/64106 |
专题 | 半导体激光器专利数据库 |
作者单位 | HITACHI LTD |
推荐引用方式 GB/T 7714 | KOBAYASHI MASAMICHI,NAKA HIROSHI,SAWAI MASAAKI,et al. Light emitting element and manufacture thereof. JP1986029184A[P]. 1986-02-10. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1986029184A.PDF(269KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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