Active region of a light emitting device optimized for increased modulation speed operation

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	Active region of a light emitting device optimized for increased modulation speed operation
其他题名	Active region of a light emitting device optimized for increased modulation speed operation
	TANDON, ASHISH; DJORDJEV, KOSTADIN; LIN, CHAO-KUN; TAN, MICHAEL R.T.
	2006-12-07
专利权人	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
公开日期	2006-12-07
授权国家	美国
专利类型	发明申请
摘要	In accordance with the invention, increased maximum modulation speeds and improved hole distribution are obtained for light emitting devices. Barrier layers of a quantum well structure for a light emitting device are formed with varying barrier energy heights. Quantum well layers of the quantum well structure are formed between the barrier layers.
其他摘要	根据本发明，对于发光器件获得了增加的最大调制速度和改进的空穴分布。用于发光器件的量子阱结构的阻挡层形成为具有变化的势垒能量高度。量子阱结构的量子阱层形成在势垒层之间。
主权项	A method comprising: forming barrier layers of a quantum well structure for a light emitting device, said barrier layers having varying barrier energy heights; and forming quantum well layers of said quantum well structure between said barrier layers.
申请日期	2005-06-01
专利号	US20060274801A1
专利状态	授权
申请号	US11/143374
公开（公告）号	US20060274801A1
IPC 分类号	H01S5/00
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64047
专题	半导体激光器专利数据库
作者单位	AVAGO TECHNOLOGIES INTERNATIONAL SALES PTE. LIMITED
推荐引用方式 GB/T 7714	TANDON, ASHISH,DJORDJEV, KOSTADIN,LIN, CHAO-KUN,et al. Active region of a light emitting device optimized for increased modulation speed operation. US20060274801A1[P]. 2006-12-07.