Multi-wavelength semiconductor laser

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	Multi-wavelength semiconductor laser
其他题名	Multi-wavelength semiconductor laser
	MATSUI TERUHITO; OOTSUKA KENICHI
	1986-01-31
专利权人	MITSUBISHI DENKI KK
公开日期	1986-01-31
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To enable a plurality of active layers to be disposed on a group of waveguide layers disposed on the same optical axis so that the active layers are in close proximity with each other, by forming diffraction lattices on waveguide layers, the lattices respectively having periods corresponding to the respective oscillation wavelengths of a plurality of active layers, and separating the diffraction lattices so that no reflection occurs between the waveguide layers. CONSTITUTION:A multi-wavelength semiconductor laser having a combination of various kinds of wavelength can be formed by appropriately selecting a composition for each of the active layers 14a, 14b of first and second semiconductor lasers and a period for each of the diffraction lattices 23a, 23b. Etched surfaces 25a, 25b are formed by chemical etching or the like in such a manner that they slant with respect to the corresponding end faces of waveguide layers 13 so as not to constitute reflecting surfaces. The waveguide layers 13 are not always required to have the same energy band gap and may have different energy band gaps corresponding to the active layers 14a, 14b. It is, however, necessary for the waveguide layers 13 to have an energy band gap which is larger than those of the active layers 14a, 14b. The diffraction lattices 23a, 23b are separated from each other so that no reflection occurs between the waveguide layers 13.
其他摘要	目的：通过在波导层上形成衍射晶格，使多个有源层设置在设置在同一光轴上的一组波导层上，使得有源层彼此非常接近，晶格分别具有周期对应于多个有源层的各个振荡波长，并分离衍射晶格，使得在波导层之间不发生反射。组成：通过适当选择第一和第二半导体激光器的每个有源层14a，14b的组成和每个衍射晶格23a的周期，可以形成具有各种波长组合的多波长半导体激光器， 23B。蚀刻表面25a，25b通过化学蚀刻等形成，使得它们相对于波导层13的相应端面倾斜，从而不构成反射表面。波导层13并不总是需要具有相同的能带隙，并且可以具有对应于有源层14a，14b的不同能带隙。然而，波导层13必须具有比有源层14a，14b的能带隙大的能带隙。衍射晶格23a，23b彼此分开，使得在波导层13之间不发生反射。
主权项	-
申请日期	1984-07-11
专利号	JP1986023385A
专利状态	失效
申请号	JP1984145314
公开（公告）号	JP1986023385A
IPC 分类号	H01S5/00 \| H01S5/062 \| H01S5/0625 \| H01S5/10 \| H01S5/12 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/64034
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI KK
推荐引用方式 GB/T 7714	MATSUI TERUHITO,OOTSUKA KENICHI. Multi-wavelength semiconductor laser. JP1986023385A[P]. 1986-01-31.

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