Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung

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	Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
其他题名	Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung
	KAJIKAWA YASUTOMO; KARAKIDA SHOUICHI; KIZUKI HIROTAKTA; MIHASHI YUTAKA; MIYASHITA MOTOHARU; OHKURA YUJI; YOSHIDA YASUAKI
	1996-06-20
专利权人	MITSUBISHI DENKI K.K. TOKIO/TOKYO JP
公开日期	1996-06-20
授权国家	德国
专利类型	发明申请
摘要	A method of fabricating a semiconductor laser device includes successively forming an active layer 3 and upper cladding layers 4, 6 on a lower cladding layer 2, etching away portions except regions of the upper cladding layers 4, 6 where a current flows to form a stripe-shaped ridge structure forming a buffer layer 8 comprising AlxGa1-xAs having an Al composition ratio x of 0 to 0.3 which is grown on surfaces of the upper cladding layers 4, 6 exposed by the etching, and forming a current blocking layer 9 comprising first conductivity type AlyGa1-yAs having an Al composition ratio y of 0.5 or more. Therefore, since the layer 8 comprises AlGaAs having a low Al composition ratio (0 SIMILAR 0.3), three-dimensional growth at the surface of the buffer layer 8 is suppressed, whereby the buffer layer 8 having reduced crystal defects is formed. Accordingly, the AlGaAs current blocking layer 9 also becomes a crystalline layer having reduced crystal defects and good crystalline quality. Consequently, current leakage is suppressed, whereby a laser having a low threshold current and a high efficiency can be fabricated.
其他摘要	制造半导体激光器件的方法包括在下包层2上依次形成有源层3和上包层4,6，蚀刻除上包层4,6的区域之外的部分，其中电流流动以形成条带形成缓冲层8的形状的脊结构，该缓冲层8包括Al组分比x为0至0.3的Al x Ga 1-x As，其生长在通过蚀刻暴露的上包层4,6的表面上，并形成包括第一电流阻挡层9的电流阻挡层9导电类型AlyGa1-yAs的Al组分比y为0.5或更大。因此，由于层8包括具有低Al组分比（0~0.3）的AlGaAs，所以抑制了缓冲层8表面的三维生长，从而形成具有减少的晶体缺陷的缓冲层8。因此，AlGaAs电流阻挡层9也变成具有减少的晶体缺陷和良好结晶质量的晶体层。因此，抑制了电流泄漏，从而可以制造具有低阈值电流和高效率的激光器。
主权项	-
申请日期	1995-12-13
专利号	DE19546578A1
专利状态	失效
申请号	DE19546578
公开（公告）号	DE19546578A1
IPC 分类号	H01L21/306 \| H01S5/00 \| H01S5/20 \| H01S5/22 \| H01S5/223 \| H01S5/323 \| H01S3/19
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63991
专题	半导体激光器专利数据库
作者单位	MITSUBISHI DENKI K.K. TOKIO/TOKYO JP
推荐引用方式 GB/T 7714	KAJIKAWA YASUTOMO,KARAKIDA SHOUICHI,KIZUKI HIROTAKTA,et al. Halbleiterlaservorrichtung und Herstellungsverfahren einer Halbleitervorrichtung. DE19546578A1[P]. 1996-06-20.