Semiconductor distribution feedback type laser device

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	Semiconductor distribution feedback type laser device
其他题名	Semiconductor distribution feedback type laser device
	TADA KUNIO; NAKANO YOSHIAKI; INOUE TAKESHI; RA TAKESHI; IRITA TAKESHI; NAKAJIMA SHINICHI
	1992-05-28
专利权人	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
公开日期	1992-05-28
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To form gain regions and absorptive regions alternately so as to get a large intermode gain by providing light absorbing layer at each apex of a semiconductor layer. CONSTITUTION:Each layer of double hetero junction structure is epitaxially grown separately in two stages. In the first stage, a clad layer 3, a semiconductor layer 4, a light absorbing layer 3 are grown on a substrate Next, by interfering exposure method and chemical etching, irregularities equivalent to the diffraction grating 256nm in cycle are marked at the light absorbing layer 13 and the semiconductor layer 4. In the second stage, a shock absorbing layer 6 is grown on the light absorbing layer 13 and the semiconductor layer 4, and further an active layer 7, a clad layer 8, and a contact layer 9 are grown in order continuously to complete double hetero structure. Next, an SiO2 insulating layer 12 is stacked on the top of the contact layer 9 to form a stripe-shaped window, for example, 10mum in width, and then electrode layers 11 and 10 are deposited. Furthermore, this is cleaved to complete individual semiconductor laser elements.
其他摘要	目的：交替形成增益区和吸收区，以通过在半导体层的每个顶点提供光吸收层来获得大的模间增益。组成：每层双异质结结构分两个阶段外生生长。在第一阶段中，在衬底1上生长包层3，半导体层4，光吸收层3.接着，通过干涉曝光方法和化学蚀刻，在周期中标记与周期256nm的衍射光栅相当的不规则性。光吸收层13和半导体层4.在第二阶段中，在光吸收层13和半导体层4上生长减震层6，并且还在有源层7，包层8和接触层上生长为了完成双异质结构，依次生长图9所示的结构。接下来，在接触层9的顶部堆叠SiO2绝缘层12以形成条形窗口，例如宽度为10μm，然后沉积电极层11和10。此外，这被切割以完成各个半导体激光器元件。
主权项	-
申请日期	1990-10-19
专利号	JP1992155986A
专利状态	失效
申请号	JP1990282698
公开（公告）号	JP1992155986A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63956
专题	半导体激光器专利数据库
作者单位	HIKARI KEISOKU GIJIYUTSU KAIHATSU KK
推荐引用方式 GB/T 7714	TADA KUNIO,NAKANO YOSHIAKI,INOUE TAKESHI,et al. Semiconductor distribution feedback type laser device. JP1992155986A[P]. 1992-05-28.