High power waveguide absorption modulator

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	High power waveguide absorption modulator
其他题名	High power waveguide absorption modulator
	CHAMBERS FRANK A; MORETTI ANTHONY G; MORETTI, ANTHONY L.
	1995-08-24
专利权人	E-SYSTEMS, INC.
公开日期	1995-08-24
授权国家	加拿大
专利类型	发明申请
摘要	A waveguide typo electro-absorptive optical modulator (6) that resists damage to its input facet (12) and methods for minimizing oreliminating optical and electrical damage to the input facet (12) of waveguide type electro-absorptive modulator (6) by fabrication of anelectrically isolated region (48) in the modulator's waveguide proximate the input facet (12) by forming an ion implantation region (46)in at least one waveguide confinement rib (44) proximate the input facet (12) a signal contact end (14) on the at least one rib (44) that isrecessed from the plane of the input facet (12), or both.
其他摘要	一种防止损坏其输入小平面（12）的波导打字错误电吸收光学调制器（6），以及用于通过制造波导型电吸收调制器（6）来最小化对波导型电吸收调制器（6）的输入小平面（12）的消除光学和电损伤的方法通过在靠近输入面（12）的至少一个波导约束肋（44）中形成离子注入区（46），在调制器的波导中靠近输入面（12）的信号接触端（14）处的电隔离区（48）在从输入面（12）的平面凹入的至少一个肋（44）上或两者上。
主权项	A method of preventing damage to a multiple layer semiconductor optical modulator of the electro-absorption type that comprises at least a waveguide core layer, an input facet for transmission of light through said waveguide layer, and at least one cladding layer that is ribbed for lateral confinement of the light that passes through said waveguide core layer, wherein an outer portion of at least one rib in said at least one cladding layer is impurity doped, and that comprises the steps of: selecting a distance for a portion of said at least one rib in said at least one cladding layer that extends along said at least one rib from said input facet to electrically isolate a portion of said waveguide layer from the rest of said waveguide layer; and implanting ions to form an ion implantation region through and across said impurity doped layer of said at least one rib at a point along said at least one rib that is approximately said selected distance from said input facet to define the boundaries of said isolated portion of said waveguide layer that protects said modulator from damage.
申请日期	1995-02-17
专利号	CA2183560A1
专利状态	失效
申请号	CA2183560
公开（公告）号	CA2183560A1
IPC 分类号	G02F1/015 \| G02F1/025 \| G02F1/017 \| H01S5/00 \| G02F1/01 \| H01S5/20
专利代理人	-
代理机构	SMART & BIGGAR
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63876
专题	半导体激光器专利数据库
作者单位	E-SYSTEMS, INC.
推荐引用方式 GB/T 7714	CHAMBERS FRANK A,MORETTI ANTHONY G,MORETTI, ANTHONY L.. High power waveguide absorption modulator. CA2183560A1[P]. 1995-08-24.