Method for a GAN vertical microcavity surface emitting laser (VCSEL)

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	Method for a GAN vertical microcavity surface emitting laser (VCSEL)
其他题名	Method for a GAN vertical microcavity surface emitting laser (VCSEL)
	HAN, JUNG; LIN, CHIA-FENG; CHEN, DANTI
	2015-10-22
专利权人	YALE UNIVERSITY
公开日期	2015-10-22
授权国家	美国
专利类型	发明申请
摘要	Methods and structures for forming vertical-cavity light-emitting devices are described. An n-side or bottom-side layer may be laterally etched to form a porous semiconductor region and converted to a porous oxide. The porous oxide can provide a current-blocking and guiding layer that aids in directing bias current through an active area of the light-emitting device. Distributed Bragg reflectors may be fabricated on both sides of the active region to form a vertical-cavity surface-emitting laser. The light-emitting devices may be formed from III-nitride materials.
其他摘要	描述了用于形成垂直腔发光装置的方法和结构。可以横向蚀刻n侧或底侧层以形成多孔半导体区域并转化为多孔氧化物。多孔氧化物可以提供电流阻挡和引导层，其有助于引导偏置电流通过发光器件的有源区域。可以在有源区的两侧制造分布式布拉格反射器，以形成垂直腔面发射激光器。发光器件可以由III族氮化物材料形成。
主权项	A semiconductor light-emitting device comprising: a substrate; an active region comprising semiconductor material, wherein the active region has a first area and at least a portion of the active region is configured for carrier recombination; a doped semiconductor region located between the active region and the substrate having a second area smaller than the first area; and a porous oxide extending around the doped semiconductor region and located between the active region and the substrate.
申请日期	2015-04-15
专利号	US20150303655A1
专利状态	申请中
申请号	US14/687814
公开（公告）号	US20150303655A1
IPC 分类号	H01S5/343 \| H01S5/183 \| H01S5/187
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63782
专题	半导体激光器专利数据库
作者单位	YALE UNIVERSITY
推荐引用方式 GB/T 7714	HAN, JUNG,LIN, CHIA-FENG,CHEN, DANTI. Method for a GAN vertical microcavity surface emitting laser (VCSEL). US20150303655A1[P]. 2015-10-22.