Semiconductor laser beam source

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	Semiconductor laser beam source
其他题名	Semiconductor laser beam source
	AOYAMA SHIGERU; OGATA SHIRO; INOUE TOKUO; YAMASHITA MAKI
	1989-08-18
专利权人	OMRON TATEISI ELECTRON CO
公开日期	1989-08-18
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To make the fluctuation of projecting laser rays in a projecting angle due to a temperature change as small as possible by a method wherein an unequally spaced diffraction grating is composed of a material which has such a thermal expansion coefficient that the fluctuation of a projecting angle can be almost compensated for with the change of the unequally spaced diffraction grating in a focal length due to a temperature change. CONSTITUTION:A semiconductor laser diode chip (LD chip) 1 is fixed to a heat sink 3, and a transparent substrate provided with a Fresnel lens 2 is disposed in front of the LD chip A material forming the Fresnel lens 2 expands or contracts with the change of temperature T. When the lens material expands thermally due to the rise of a temperature T, the period of a lens pattern increases, and consequently the focal length of the Fresnel lens 2 grows larger. Therefore, the fluctuations of the focal length of the Fresnel lens 2 due to the change of an oscillating wavelength of the LD chip 1 caused by a temperature change and due to the thermal expansion and contraction of the lens material are made to act cancelling each other. By these processes, a projecting laser beam can be prevented from fluctuating in a projecting angle.
其他摘要	目的：通过一种方法，使一个不等间距的衍射光栅由具有这样的热膨胀系数的材料组成的方法，使由于温度变化引起的投影激光射线在一个投射角度的波动尽可能小。由于温度变化引起的焦距不等间距衍射光栅的变化，几乎可以补偿角度。组成：半导体激光二极管芯片（LD芯片）1固定在散热器3上，设有菲涅耳透镜2的透明基板设置在LD芯片1的前面。形成菲涅耳透镜2的材料膨胀或收缩随着温度T的变化，当透镜材料由于温度T的升高而热膨胀时，透镜图案的周期增加，因此菲涅耳透镜2的焦距变大。因此，由于温度变化引起的LD芯片1的振荡波长的变化以及由于透镜材料的热膨胀和收缩引起的菲涅耳透镜2的焦距的波动使得彼此抵消。。通过这些处理，可以防止投射的激光束以投射角度波动。
主权项	-
申请日期	1988-02-15
专利号	JP1989206682A
专利状态	失效
申请号	JP1988030970
公开（公告）号	JP1989206682A
IPC 分类号	H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/63139
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRON CO
推荐引用方式 GB/T 7714	AOYAMA SHIGERU,OGATA SHIRO,INOUE TOKUO,et al. Semiconductor laser beam source. JP1989206682A[P]. 1989-08-18.

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