Manufacture of semiconductor luminescent device

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	Manufacture of semiconductor luminescent device
其他题名	Manufacture of semiconductor luminescent device
	NAKAMURA TOMOJI
	1986-07-16
专利权人	FUJITSU LTD
公开日期	1986-07-16
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To prevent the Au film from penetrating the semiconductor layer and to prevent the bad effect of the Au film by a method wherein a Ti film and a Pt film are adhered on the upper surface of the semiconductor substrate in such a way that at least one side of the Ti film and the Pt film is brought into an amorphous state. CONSTITUTION:The semiconductor substrate formed with a P-type InGaAsP contact layer 5 on its uppermost surface is placed in the chamber of the electron beam evaporating device and the substrate is cooled by liquid nitrogen and is made to drop to an absolute temperature of 77 deg.K. The interior of the evaporating chamber is made vacuous, and a Ti film 11 and a Pt film 12 are continuously evaporated on the upper surface of the semiconductor substrate by an electron beam evaporation method. So that the films 11 and 12 in an amorphous state are formed. Then, an Au film 13 is evaporated thereon. According to such a forming method, the film 11 and the film 12, which are adhered in an amorphous state, are hard to crystallize, and even though the films 11 and 12 are crystallized, pinholes are hard to generate. Accordingly, the Au film is prevented from penetrating the semiconductor layer and is prevented from being diffused in the semiconductor layer. As a result, the characteristics of the semiconductor laser can be made to improve.
其他摘要	用途：为了防止Au膜穿透半导体层并防止Au膜的不良影响，其中Ti膜和Pt膜以至少至少粘附在半导体衬底的上表面上的方式Ti膜的一面和Pt膜成为非晶态。组成：在其最上表面上形成有P型InGaAsP接触层5的半导体衬底放置在电子束蒸发装置的腔室中，并且通过液氮冷却衬底并使其降至绝对温度77度。 .K。蒸发室的内部是空的，并且通过电子束蒸发方法在半导体衬底的上表面上连续蒸发Ti膜11和Pt膜12。从而形成处于非晶态的膜11和12。然后，在其上蒸发Au膜13。根据这种形成方法，以非晶态粘附的膜11和膜12难以结晶，并且即使膜11和12结晶，也难以产生针孔。因此，防止Au膜渗透半导体层并防止其在半导体层中扩散。结果，可以改善半导体激光器的特性。
主权项	-
申请日期	1984-12-27
专利号	JP1986156786A
专利状态	失效
申请号	JP1984280728
公开（公告）号	JP1986156786A
IPC 分类号	H01L21/28 \| H01L33/14 \| H01L33/24 \| H01L33/30 \| H01L33/40 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62958
专题	半导体激光器专利数据库
作者单位	FUJITSU LTD
推荐引用方式 GB/T 7714	NAKAMURA TOMOJI. Manufacture of semiconductor luminescent device. JP1986156786A[P]. 1986-07-16.

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