Xi'an Institute of Optics and Precision Mechanics,CAS
Assembling method for semiconductor element | |
其他题名 | Assembling method for semiconductor element |
OOMURA ETSUJI; HIGUCHI HIDEYO | |
1982-04-05 | |
专利权人 | MITSUBISHI DENKI KK |
公开日期 | 1982-04-05 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To remove residual stress applied to a semiconductor element at an ambient temperature by compressing the periphery of the heat sink of metal at the temperature rising time of heat fusion and bonding while limiting the thermal expansion. CONSTITUTION:A copper heat sink 12 is placed on a base 21, is compressed by a piston 22, and the expansion DELTAL of the heat sink is set to zero at the temperature rising time, or equalized approximately to the thermal expansion Al of the semiconductor laser 1 With this configuration, when it is returned from melting time to ambient temperature, the residual stress due to the difference of the thermal expansion coefficients can be almost eliminated. Accordingly, the reliability of the laser 11 can be improved. |
其他摘要 | 用途:通过在热熔融和粘接的升温时压缩金属散热片的周边,同时限制热膨胀,去除在环境温度下施加到半导体元件上的残余应力。组成:铜散热器12放置在基座21上,由活塞22压缩,散热器的膨胀DELTAL在升温时间设定为零,或大致等于半导体的热膨胀Al利用这种结构,当它从熔化时间返回到环境温度时,几乎可以消除由于热膨胀系数的差异引起的残余应力。因此,可以提高激光器11的可靠性。 |
主权项 | - |
申请日期 | 1980-09-23 |
专利号 | JP1982056936A |
专利状态 | 失效 |
申请号 | JP1980132485 |
公开(公告)号 | JP1982056936A |
IPC 分类号 | H01L21/52 | H01L21/58 | H01S5/00 | H01S3/096 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/62806 |
专题 | 半导体激光器专利数据库 |
作者单位 | MITSUBISHI DENKI KK |
推荐引用方式 GB/T 7714 | OOMURA ETSUJI,HIGUCHI HIDEYO. Assembling method for semiconductor element. JP1982056936A[P]. 1982-04-05. |
条目包含的文件 | 条目无相关文件。 |
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