Semiconductor luminous device and its manufacture

OPT OpenIR > 半导体激光器专利数据库

	Semiconductor luminous device and its manufacture
其他题名	Semiconductor luminous device and its manufacture
	KINOSHITA JIYUNICHI; UEMATSU YUTAKA
	1981-09-01
专利权人	TOKYO SHIBAURA ELECTRIC CO
公开日期	1981-09-01
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To save an unnecessary function resulting from the thickness of a light permeable window by providing a through hole at the center of a light permeable window, condensing a light into the through hole from a luminous element and providing a rod-shaped lens having a square refraction factor distribution in an oriented diametrical direction. CONSTITUTION:A semiconductor laser 40 is mounted on a combination heat sink and stem 40a. A laser beam irradiated from the facing of the semiconductor laser 40 penetrates through the center of a light permeable glass window 41a combined with a sealing element and is condensed by a rod-shaped lens 44 having a square refraction factor distribution adhered with an adhesive. In addition, it is oriented so that it is irradiated through a glass window. In this case, the glass window 41a has no optical function and an irradiated light penetrates only through the rod- shaped lens 44 and then is condensed.
其他摘要	用途：通过在透光窗的中心设置通孔，将光透射窗的厚度所产生的不必要的功能，将光从发光元件聚光到通孔中，并提供具有方向直径方向上的平方折射系数分布。组成：半导体激光器40安装在组合散热器和阀杆40a上。从半导体激光器40的表面照射的激光束穿过透光玻璃窗41a的中心，与密封元件结合，并由具有用粘合剂粘附的方形折射系数分布的杆状透镜44会聚。另外，它被定向成通过玻璃窗照射。在这种情况下，玻璃窗41a不具有光学功能，并且照射的光仅穿过棒状透镜44，然后被冷凝。
主权项	-
申请日期	1980-02-04
专利号	JP1981110274A
专利状态	失效
申请号	JP1980011422
公开（公告）号	JP1981110274A
IPC 分类号	G02B6/42 \| H01L33/20 \| H01L33/30 \| H01L33/58 \| H01S5/00 \| H01L33/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62789
专题	半导体激光器专利数据库
作者单位	TOKYO SHIBAURA ELECTRIC CO
推荐引用方式 GB/T 7714	KINOSHITA JIYUNICHI,UEMATSU YUTAKA. Semiconductor luminous device and its manufacture. JP1981110274A[P]. 1981-09-01.