Method of making and testing a semiconductor device

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	Method of making and testing a semiconductor device
其他题名	Method of making and testing a semiconductor device
	BETHEA, CLYDE GEORGE
	1994-10-05
专利权人	AT&T CORP.
公开日期	1994-10-05
授权国家	欧洲专利局
专利类型	发明申请
摘要	The inventive methods of making a semiconductor device, e.g., a laser, comprise thermal (e.g., 3-5 µm wavelength) imaging of a powered, partially completed device. The thermal image is obtained with apparatus that is capable of forming a substantially diffraction-limited image on a sensor array with an acquisition time of no more than 0.1 seconds, preferable no more than 0.01 seconds. In preferred embodiments, the image has temperature resolution of 0.01°C or better. Exemplary apparatus is disclosed. The inventive method facilitates, for instance, early identification of devices that are likely to fail lifetime requirements.
其他摘要	制造半导体器件（例如激光器）的本发明方法包括对供电的，部分完成的器件进行热（例如，3-5μm波长）成像。利用能够在传感器阵列上形成基本上衍射受限的图像的设备获得热图像，获取时间不超过0.1秒，优选不超过0.01秒。在优选的实施方案中，图像的温度分辨率为0.01℃或更高。公开了示例性装置。例如，本发明的方法便于早期识别可能使寿命要求失效的设备。
主权项	Manufacturing method comprising a multiplicity of manufacturing steps including providing a semiconductor body and forming on and/or in said body one or more semiconductor devices, a given of said devices (e.g., 10) having a surface and comprising contact means (19) such that an electrical current can be caused to flow through the given device, the method further comprising causing, prior to completion of the devices, the flow of electrical current through at least said given partially completed device, forming an image of at least a portion of said given partially completed device, said image being an infrared image comprising features representative of the temperature at a multiplicity of points of the given partially completed device; comparing the temperature corresponding to at least one of said features of the infrared image to a predetermined target value; and carrying out at least one further step on said one or more devices in accordance with the result of the comparing step; CHARACTERIZED IN THAT the method comprises forming the infrared image with imaging apparatus (e.g., 22) that is adapted for forming, with an acquisition time of no more that 0.1 s, a substantially diffraction-limited infrared image of said at least portion of the given device on detection means (e.g., 23) that comprise a multiplicity of infrared-sensitive regions.
申请日期	1994-03-23
专利号	EP0618455A2
专利状态	失效
申请号	EP1994302066
公开（公告）号	EP0618455A2
IPC 分类号	G01N21/88 \| G01R31/308 \| H01L21/66 \| H01S5/00 \| H01S5/022 \| H01S5/042 \| H01L33/00 \| H01S3/025
专利代理人	-
代理机构	WATTS, CHRISTOPHER MALCOLM KELWAY, DR.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62637
专题	半导体激光器专利数据库
作者单位	AT&T CORP.
推荐引用方式 GB/T 7714	BETHEA, CLYDE GEORGE. Method of making and testing a semiconductor device. EP0618455A2[P]. 1994-10-05.

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