Xi'an Institute of Optics and Precision Mechanics,CAS
Mounting substrate for high-speed laser diode | |
其他题名 | Mounting substrate for high-speed laser diode |
GOTO TOMOJI; TSUJIOKA MASANORI; OTSUKA AKIRA | |
1989-02-08 | |
专利权人 | SUMITOMO ELECTRIC IND LTD |
公开日期 | 1989-02-08 |
授权国家 | 日本 |
专利类型 | 发明申请 |
摘要 | PURPOSE:To package a high-speed laser diode with high density, and to operate it at high speed by integrally mounting the laser diode and an IC for drive onto a substrate, using a microstrip line as a signal transmission line and lowering the impedance of a power line. CONSTITUTION:IC signal conductors 5 form microstrip lines among themselves and a ground conductor 13 on the rear of a substrate, characteristic impedance is shaped in conformity with the impedance of a coaxial cable on the outside and a measuring instrument, and the reflection of a signal at the time of entering to the IC signal conductors can be removed. An IC laser connecting line 3 connecting an IC for drive and a laser diode shapes a microstrip line between the connecting line 3 and a ground plane 10 through a dielectric thin- film 8, and impedance mismatching can be eliminated. IC power lines 4 and a laser-diode power line 9 face one another, holding the ground plane 10 and the dielectric thin-film 8, characteristic impedance is shaped extremely low, and supply potential can be stabilized. |
其他摘要 | 目的:封装高密度高速激光二极管,并通过将激光二极管和驱动IC整体安装到基板上,使用微带线作为信号传输线并降低阻抗来高速运行电力线。组成:IC信号导体5之间形成微带线和基板后部的接地导体13,特征阻抗的形状符合外部同轴电缆的阻抗和测量仪器,以及信号的反射在进入IC信号时,可以去除导体。连接用于驱动的IC和激光二极管的IC激光器连接线3通过电介质薄膜8在连接线3和接地平面10之间形成微带线,并且可以消除阻抗失配。 IC电源线4和激光二极管电源线9彼此面对,保持接地面10和电介质薄膜8,特征阻抗形状极低,并且可以稳定供电电位。 |
主权项 | - |
申请日期 | 1987-08-03 |
专利号 | JP1989037892A |
专利状态 | 失效 |
申请号 | JP1987194042 |
公开(公告)号 | JP1989037892A |
IPC 分类号 | H01S5/00 | H01S5/042 | H01S3/096 | H01S3/18 |
专利代理人 | - |
代理机构 | - |
文献类型 | 专利 |
条目标识符 | http://ir.opt.ac.cn/handle/181661/62612 |
专题 | 半导体激光器专利数据库 |
作者单位 | SUMITOMO ELECTRIC IND LTD |
推荐引用方式 GB/T 7714 | GOTO TOMOJI,TSUJIOKA MASANORI,OTSUKA AKIRA. Mounting substrate for high-speed laser diode. JP1989037892A[P]. 1989-02-08. |
条目包含的文件 | ||||||
文件名称/大小 | 文献类型 | 版本类型 | 开放类型 | 使用许可 | ||
JP1989037892A.PDF(457KB) | 专利 | 开放获取 | CC BY-NC-SA | 请求全文 |
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