Edge-Coupled Semiconductor Photodetector

OPT OpenIR > 半导体激光器专利数据库

	Edge-Coupled Semiconductor Photodetector
其他题名	Edge-Coupled Semiconductor Photodetector
	WANG, SAMUEL C.; LAO, PETER; KUMAR, DHIRAJ
	2018-06-28
专利权人	GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
公开日期	2018-06-28
授权国家	美国
专利类型	发明申请
摘要	A device is disclosed for monitoring power from a laser diode. The device includes a substrate having a top surface and a first facet perpendicular to the top surface through which light enters the substrate. The device further includes a second facet onto which light that has entered the substrate through the first facet along an optical axis that is non-normal to the first facet is incident. The device further includes a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate along the optical axis that is non-normal to the first facet. The light that has entered the substrate through the first facet along the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
其他摘要	公开了一种用于监控来自激光二极管的功率的装置。该器件包括具有顶表面和垂直于顶表面的第一小平面的基板，光通过该第一小平面进入基板。该装置还包括第二小平面，在该第二小平面上沿着与第一小平面不垂直的光轴通过第一小平面进入基板的光入射。该装置还包括在基板的顶表面上制造的光电二极管，用于测量沿着与第一小平面不垂直的光轴进入基板的第一小平面的光的强度。通过第一小平面沿着与第一小平面不垂直的光轴进入基板的光被第二小平面朝向光电二极管的光活性区域反射。
主权项	A device comprising:a substrate having: a top surface; a first facet perpendicular to the top surface through which light enters the substrate; and a second facet onto which light that has entered the substrate through the first facet with a principal direction of propagation aligned with an optical axis of the device is incident, wherein the optical axis of the device is non-normal to the first facet and parallel to the top surface; and a photodiode fabricated on the top surface of the substrate for measuring an intensity of the light that enters the first facet of the substrate with the principal direction of propagation aligned with the optical axis of the device; wherein the light that has entered the substrate through the first facet with the principal direction of propagation aligned with the optical axis that is non-normal to the first facet is reflected by the second facet toward a photoactive region of the photodiode.
申请日期	2017-08-03
专利号	US20180180468A1
专利状态	授权
申请号	US15/668639
公开（公告）号	US20180180468A1
IPC 分类号	G01J1/04 \| G02B6/42 \| H01S5/0683 \| G01J1/02
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/62572
专题	半导体激光器专利数据库
作者单位	GLOBAL COMMUNICATION SEMICONDUCTORS, LLC
推荐引用方式 GB/T 7714	WANG, SAMUEL C.,LAO, PETER,KUMAR, DHIRAJ. Edge-Coupled Semiconductor Photodetector. US20180180468A1[P]. 2018-06-28.