Semiconductor Laser Device and Method for Fabricating Same

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	Semiconductor Laser Device and Method for Fabricating Same
其他题名	Semiconductor Laser Device and Method for Fabricating Same
	HASEGAWA, YOSHIAKI; YOKOGAWA, TOSHIYA; YAJIMA, HIROYOSHI
	2008-02-28
专利权人	PANASONIC CORPORATION
公开日期	2008-02-28
授权国家	美国
专利类型	发明申请
摘要	A semiconductor laser device according to the present invention includes: a semiconductor laser chip 1 for emitting laser light; a stem 3, 4 for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem 3, 4, for supplying power to the semiconductor laser chip; and a cap 5 having an optical window 6 which transmits laser light and being affixed to the stem 3, 4 so as to cover the semiconductor laser chip Between the stem 3, 4 and the terminal electrodes 7, this device includes insulation glass 8, which does not release silicon fluoride gas when heated to a temperature of no less than 700° C. and no more than 850° C.
其他摘要	根据本发明的半导体激光装置包括：用于发射激光的半导体激光器芯片1;用于支撑半导体激光器芯片的杆3,4;多个端子电极，插入设置在杆3,4中的通孔中，用于向半导体激光器芯片供电;盖子5具有光学窗口6，该光学窗口6透射激光并固定到杆3,4上以覆盖半导体激光器芯片在杆3,4之间和端子电极7之间，该装置包括绝缘玻璃8当加热到不低于700℃且不高于850℃的温度时，它不释放氟化硅气体。
主权项	A semiconductor laser device comprising: a semiconductor laser chip for emitting laser light; a stem for supporting the semiconductor laser chip; a plurality of terminal electrodes, inserted in throughholes provided in the stem, for supplying power to the semiconductor laser chip; a cap having an optical window which transmits laser light and being affixed to the stem so as to cover the semiconductor laser chip; and insulation glass provided between the stem and the terminal electrodes, wherein, a total amount of silicon fluoride gas which is released when the insulation glass is heated to a temperature of no less than 700° C. and no more than 850° C. is equal to or less than 0 μg.
申请日期	2005-06-02
专利号	US20080049800A1
专利状态	授权
申请号	US11/569683
公开（公告）号	US20080049800A1
IPC 分类号	H01S5/022 \| G11B7/00 \| H01L33/00 \| H01S5/024
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/61238
专题	半导体激光器专利数据库
作者单位	PANASONIC CORPORATION
推荐引用方式 GB/T 7714	HASEGAWA, YOSHIAKI,YOKOGAWA, TOSHIYA,YAJIMA, HIROYOSHI. Semiconductor Laser Device and Method for Fabricating Same. US20080049800A1[P]. 2008-02-28.