Surface emission semiconductor laser

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	Surface emission semiconductor laser
其他题名	Surface emission semiconductor laser
	KAWASE, TAKEO; KANEKO, TAKEO
	1999-08-11
专利权人	SEIKO EPSON CORPORATION
公开日期	1999-08-11
授权国家	欧洲专利局
专利类型	发明申请
摘要	In order to facilitate control of the polarization plane of a laser beam emerging from a surface-emitting-type semiconductor laser in a specific direction and to suppress occurrence of fluctuations and switching of the polarization plane depending on the optical output and the environmental temperature, a strain generating section (19) is arranged adjacent to a resonator (10B) of a semiconductor laser. The strain generating section (19) impresses anisotropic stress to the resonator (10B) to generate strain, resulting in birefringence and dependence of the gain on the polarization in the resonator (10A). This enables stabilized control of the polarization plane.
其他摘要	为了便于控制从表面发射型半导体激光器在特定方向出射的激光束的偏振面，并且根据光输出和环境温度来抑制偏振面的波动和切换的发生，应变发生部（19）与半导体激光器的谐振器（10B）相邻配置。应变发生部（19）对谐振器（10B）施加各向异性应力，产生应变，产生双折射，增益对谐振器（10A）的极化的依赖性。这使得能够稳定地控制偏振面。
主权项	A surface-emitting-type semiconductor laser comprising a resonator perpendicular to a semiconductive substrate, a laser beam from the resonator being emitted perpendicular to the semiconductive substrate, wherein at least one strain generating section is provided adjacent to the resonator.
申请日期	1998-07-23
专利号	EP0935321A1
专利状态	失效
申请号	EP1998933935
公开（公告）号	EP0935321A1
IPC 分类号	G11B7/125 \| H01S5/183 \| H01S5/00 \| H01S5/06 \| H01S5/062 \| H01S5/10 \| H01S5/32 \| H01S5/34 \| H01S3/18
专利代理人	-
代理机构	HOFFMANN, ECKART, DIPL.-ING.
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/60208
专题	半导体激光器专利数据库
作者单位	SEIKO EPSON CORPORATION
推荐引用方式 GB/T 7714	KAWASE, TAKEO,KANEKO, TAKEO. Surface emission semiconductor laser. EP0935321A1[P]. 1999-08-11.