Semiconductor light emitter

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	Semiconductor light emitter
其他题名	Semiconductor light emitter
	MAEI SHIGEKI; OTSUKA NAOTAKA
	1991-08-09
专利权人	SHARP CORP
公开日期	1991-08-09
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To improve an S/N even when reading stored information from a recording carrier with a low light emitting output by providing plural laser chips, each different in reflectance on a laser emitting surface, and a hologram diffraction grating. CONSTITUTION:A laser beam, which is emitted from a semiconductor laser chip 11 for write at a high output, is made incident to a hologram diffraction grating 13. The 0th order beam transmitted through a hologram 13a is made incident to a recording carrier 17 and data are written into the carrier 17. Next, the laser beam emitted from a semiconductor laser chip 12 for read at a low output is made incident to the carrier 17. The 1st beam diffracted by the hologram 13a is made incident to the carrier 17. In the case of such operation, since the reflectance on the laser emitting surface of the chip 12 is made higher than the reflectance on the laser emitting surface of the chip 11, the returned beam to be reflected by the carrier 17 and to arrive at the chip 12 scarcely go into the internal part of the laser chip. Therefore, even when the light emitting output of the chip 12 is low, the data can be read out with high S/N.
其他摘要	用途：通过提供激光发射表面上的反射率不同的多个激光芯片和全息衍射光栅，即使在从具有低发光输出的记录载体读取存储信息时也改善S / N.组成：从半导体激光器芯片11发出的用于高输出写入的激光束入射到全息衍射光栅13.通过全息图13a传输的0级光束入射到记录载体17和然后，将从半导体激光器芯片12发射的用于低输出读取的激光束入射到载体17.由全息图13a衍射的第一束入射到载体17。在这种操作的情况下，由于芯片12的激光发射表面上的反射率高于芯片11的激光发射表面上的反射率，所以返回的光束将被载体17反射并到达芯片12几乎不进入激光芯片的内部。因此，即使当芯片12的发光输出低时，也可以以高S / N读出数据。
主权项	-
申请日期	1989-12-12
专利号	JP1991183032A
专利状态	失效
申请号	JP1989324501
公开（公告）号	JP1991183032A
IPC 分类号	G02B5/30 \| G11B7/125 \| H01S3/101 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/59655
专题	半导体激光器专利数据库
作者单位	SHARP CORP
推荐引用方式 GB/T 7714	MAEI SHIGEKI,OTSUKA NAOTAKA. Semiconductor light emitter. JP1991183032A[P]. 1991-08-09.

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