Method of driving bistable semiconductor laser

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	Method of driving bistable semiconductor laser
其他题名	Method of driving bistable semiconductor laser
	ISHIKAWA MAKOTO
	1990-05-25
专利权人	NEC CORP
公开日期	1990-05-25
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To obtain a large modulation optical output without a driver circuit by a method wherein an impressed voltage in an absorption region of a bistable semiconductor laser is changed. CONSTITUTION:A bistable semiconductor laser 1 is provided with an excitation region 2 and an absorption region 3; when an electric current I is injected only into the excitation region 2, an optical output is increased nonlinearly at a certain electric current value. These oscillation threshold values I1, I2 are changed in accordance with an optical loss in the absorption region 3; the oscillation threshold values are increased with an increase in the optical loss. The optical loss in the absorption region 3 can be controlled easily by a very weak voltage which is lower than a voltage causing a gain; the optical loss is increased with a decrease in impressed voltages V1, V2. Accordingly, only when a very weak signal voltage 4 is applied to the absorption region 3 in a state that a proper definite bias current IB has been applied to the excitation region 2, it is possible to obtain a large modulation optical output 6. Thereby, it is possible to obtain the large modulation optical output without a driver circuit and only by changing an impressed voltage in the absorption region.
其他摘要	目的：通过一种改变双稳态半导体激光器的吸收区域中的外加电压的方法，在没有驱动电路的情况下获得大的调制光输出。组成：双稳态半导体激光器1设有激发区2和吸收区3;当电流I仅被注入激励区域2时，光输出在某个电流值处非线性地增加。这些振荡阈值I1，I2根据吸收区域3中的光学损耗而变化。振荡阈值随着光学损耗的增加而增加。吸收区域3中的光学损耗可以通过非常弱的电压容易地控制，该电压低于引起增益的电压;随着外加电压V1，V2的减小，光学损耗增加。因此，只有当在激励区域2上施加适当的确定偏置电流IB的状态下将非常弱的信号电压4施加到吸收区域3时，才有可能获得大的调制光输出6。可以在没有驱动电路的情况下获得大调制光输出，并且仅通过改变吸收区域中的外加电压。
主权项	-
申请日期	1988-11-18
专利号	JP1990137383A
专利状态	失效
申请号	JP1988291290
公开（公告）号	JP1990137383A
IPC 分类号	G11B7/12 \| G02F3/02 \| H01S5/042 \| H01S5/06 \| H01S3/096
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/59595
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	ISHIKAWA MAKOTO. Method of driving bistable semiconductor laser. JP1990137383A[P]. 1990-05-25.

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