Array-type semiconductor laser device and drive thereof

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	Array-type semiconductor laser device and drive thereof
其他题名	Array-type semiconductor laser device and drive thereof
	KATAYAMA RYUICHI; ISHIKAWA MAKOTO
	1989-11-15
专利权人	NEC CORP
公开日期	1989-11-15
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To allow desired characteristics such as low noise for reproduction and high output for recording to be obtained by making semiconductor lasers different in structure for recording and reproduction. CONSTITUTION:Structures are made such that a conductive electrode layer of a semiconductor laser for reproduction is electrically isolated, while that of a semiconductor laser for recording is not electrically isolated. That is, the conductive electrode layer of at least one of the semiconductor lasers is electrically isolated at two regions, i.e., an exciting region 12 and an absorbing region 11, while the conductive electrode layer of at least other one of the semiconductor lasers has no such isolation as above. Accordingly, a laser device having desired characteristics such as high output for the recording semiconductor laser and low noise for the reproducing semiconductor laser can be obtained without externally adding a high-frequency superimposing circuit as the light source for an optical disk device.
其他摘要	目的：通过使半导体激光器的结构与记录和再现不同，可以获得所需的特性，例如低噪声再现和高输出记录。组成：制作结构使得用于再现的半导体激光器的导电电极层电隔离，而用于记录的半导体激光器的导电电极层不是电隔离的。也就是说，至少一个半导体激光器的导电电极层在两个区域，即激发区域12和吸收区域11处电隔离，而至少另一个半导体激光器的导电电极层没有。如上所述的隔离。因此，可以获得具有所需特性的激光器件，例如用于记录半导体激光器的高输出和用于再现半导体激光器的低噪声，而无需外部添加高频叠加电路作为光盘器件的光源。
主权项	-
申请日期	1988-05-11
专利号	JP1989283983A
专利状态	失效
申请号	JP1988112512
公开（公告）号	JP1989283983A
IPC 分类号	H01S5/00 \| G11B7/125 \| H01S5/042 \| H01S3/096 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/59568
专题	半导体激光器专利数据库
作者单位	NEC CORP
推荐引用方式 GB/T 7714	KATAYAMA RYUICHI,ISHIKAWA MAKOTO. Array-type semiconductor laser device and drive thereof. JP1989283983A[P]. 1989-11-15.

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