Semiconductor laser light source

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	Semiconductor laser light source
其他题名	Semiconductor laser light source
	OGATA SHIRO; SAKAI YASUMASA; AOYAMA SHIGERU; YAMASHITA MAKI
	1988-09-19
专利权人	OMRON TATEISI ELECTRONICS CO
公开日期	1988-09-19
授权国家	日本
专利类型	发明申请
摘要	PURPOSE:To stabilize optical characteristics and to control an emitting light enlarging angle as required by independently regulating a semiconductor laser and a Fresnel lens at temperatures. CONSTITUTION:The temperature of a semiconductor laser 1 is controlled by a Peltier element 1 That is, the element 11 is so controlled to be driven by a first temperature regulator that the detected temperature of a thermocouple 21 becomes a predetermined set temperature. Similarly, the temperature of a Fresnel lens 2 is controlled to be driven at a Peltier element 12 on the basis of the detected temperature of a thermocouple 22 by a second temperature regulator to become a predetermined temperature. Thus, the laser 1 and the lens 2 are controlled independently from each other at the temperatures. Therefore, a semiconductor laser light source in which stable optical characteristics are provided with respect to temperature change and the emitting light beam directing angle can be altered is obtained.
其他摘要	用途：通过在温度下独立调节半导体激光器和菲涅耳透镜，稳定光学特性并控制发光增大角度。组成：半导体激光器1的温度由珀耳帖元件11控制。也就是说，元件11被控制为由第一温度调节器驱动，使得热电偶21的检测温度变为预定的设定温度。类似地，基于由第二温度调节器检测的热电偶22的温度，菲涅耳透镜2的温度被控制为在帕尔贴元件12处被驱动，以变为预定温度。因此，激光器1和透镜2在这些温度下彼此独立地控制。因此，获得了一种半导体激光光源，其中可以改变关于温度变化和发射光束定向角的稳定光学特性。
主权项	-
申请日期	1987-03-13
专利号	JP1988224384A
专利状态	失效
申请号	JP1987056866
公开（公告）号	JP1988224384A
IPC 分类号	F21V5/04 \| G02B6/42 \| H01S5/00 \| H01S3/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/59496
专题	半导体激光器专利数据库
作者单位	OMRON TATEISI ELECTRONICS CO
推荐引用方式 GB/T 7714	OGATA SHIRO,SAKAI YASUMASA,AOYAMA SHIGERU,et al. Semiconductor laser light source. JP1988224384A[P]. 1988-09-19.

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