Cte-matched silicon-carbide submount with high thermal conductivity contacts

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	Cte-matched silicon-carbide submount with high thermal conductivity contacts
其他题名	Cte-matched silicon-carbide submount with high thermal conductivity contacts
	KANSKAR, MANOJ; CHEN, ZHIGANG
	2019-02-07
专利权人	NLIGHT, INC.
公开日期	2019-02-07
授权国家	美国
专利类型	发明申请
摘要	Laser diode submounts include a SiC substrate on which a thick conductive layer is supplied to use in mounting a laser diode. The thick conductive layer is typically gold or copper, and can be electrically coupled to a base laser that is used to define laser diode couplings.
其他摘要	激光二极管底座包括SiC衬底，在衬底上提供厚导电层以用于安装激光二极管。厚导电层通常是金或铜，并且可以电耦合到用于限定激光二极管耦合的基础激光器。
主权项	A laser diode submount, comprising: a thermally conductive, insulating substrate; a first contact, a second contact, and a bonding contact situated on a major surface of the substrate, wherein the first contact and the bonding contact are electrically coupled to each other and insulated from the second contact, and the bonding contact includes a thermally conductive layer of thickness of at least 0.5 μm.
申请日期	2018-08-01
专利号	US20190044302A1
专利状态	申请中
申请号	US16/052517
公开（公告）号	US20190044302A1
IPC 分类号	H01S5/022 \| H01S5/323 \| H01S5/024
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/57730
专题	半导体激光器专利数据库
作者单位	NLIGHT, INC.
推荐引用方式 GB/T 7714	KANSKAR, MANOJ,CHEN, ZHIGANG. Cte-matched silicon-carbide submount with high thermal conductivity contacts. US20190044302A1[P]. 2019-02-07.