Improved thermal contact for semiconductors and related methods

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	Improved thermal contact for semiconductors and related methods
其他题名	Improved thermal contact for semiconductors and related methods
	CRAWFORD, DEVIN EARL; THIAGARAJAN, PRABHU
	2018-11-28
专利权人	LASERTEL INC.
公开日期	2018-11-28
授权国家	欧洲专利局
专利类型	发明申请
摘要	The invention relates to a semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.
其他摘要	本发明涉及一种半导体装置，该半导体装置具有改进的散热性和改善的散热器热流。半导体装置包括p型半导体。 n-p隧道结位于p型半导体的外延结构内。金属接触层通过合金化的n型接触界面连接到n-p隧道结。 n-p隧道结改善了来自半导体的热流，通过在隧道结和金属接触层之间形成的合金接触界面，与传统的p型接触的冶金学突变界面相比，其具有较低的热阻和电阻。
主权项	A semiconductor apparatus comprising: a p-type semiconductor; an n-p tunnel junction positioned within an epitaxial structure of the p-type semiconductor; and a metal contact layer connected to the n-p tunnel junction through an alloyed n-type contact interface.
申请日期	2018-05-18
专利号	EP3407440A1
专利状态	申请中
申请号	EP2018173282
公开（公告）号	EP3407440A1
IPC 分类号	H01S5/042 \| H01S5/30
专利代理人	-
代理机构	VAN TRIER, NORBERTUS HENRICUS GERARDUS
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/57718
专题	半导体激光器专利数据库
作者单位	LASERTEL INC.
推荐引用方式 GB/T 7714	CRAWFORD, DEVIN EARL,THIAGARAJAN, PRABHU. Improved thermal contact for semiconductors and related methods. EP3407440A1[P]. 2018-11-28.