Surface emitting laser structure

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	Surface emitting laser structure
其他题名	Surface emitting laser structure
	WANG, JONATHAN; HSIEH, PEI-CHIN; WANG, PEI-JIH; CHENG, SHIH-CHIEH
	2018-01-18
专利权人	TREND LIGHTING CORP.
公开日期	2018-01-18
授权国家	美国
专利类型	发明申请
摘要	A surface emitting laser with improved efficiency includes a conductive substrate, a metal bonding layer, a laser structure layer, an epitaxial semiconductor reflection layer, and an electrode layer. The laser structure layer has an epitaxial current-blocking layer having a current opening. Currents are only transmitting through the current opening. The epitaxial current-blocking layer is grown by a semiconductor epitaxy process to confine the range of the currents to form electric fields. Heat dissipation and electrical conduction properties are improved by the conductive substrate. Because the epitaxial current-blocking layer is not made by destructive manufacturing method, the efficiency of the surface emitting laser can be improved.
其他摘要	一种效率提高的表面发射激光器包括导电基底，金属粘结层，激光结构层，外延半导体反射层和电极层。激光器结构层具有外延电流阻挡层，该外延电流阻挡层具有电流开口。电流仅通过当前开口传输。外延电流阻挡层通过半导体外延工艺生长，以限制电流范围以形成电场。导电基板改善了散热和导电性能。因为外延电流阻挡层不是通过破坏性制造方法制造的，所以可以提高表面发射激光器的效率。
主权项	A surface emitting laser with improved efficiency, the surface emitting laser comprising: a conductive substrate; a metal bonding layer on an upper surface of the conductive substrate; a laser structure layer on an upper surface of the metal bonding layer, wherein the laser structure layer has a first epitaxial current-blocking layer, and the first epitaxial current-blocking layer has a first current opening for current passing; an epitaxial semiconductor reflection layer on an upper surface of the laser structure layer; a first electrode layer on an upper surface of the epitaxial semiconductor reflection layer for packaging and electrical conduction; wherein, the first epitaxial current-blocking layer is grown by a semiconductor epitaxy process, and a type of a semiconductor material of the first epitaxial current-blocking layer is different from a type of a semiconductor material of the laser structure layer.
申请日期	2017-07-18
专利号	US20180019573A1
专利状态	授权
申请号	US15/652397
公开（公告）号	US20180019573A1
IPC 分类号	H01S5/22 \| H01S5/026 \| H01S5/02 \| H01S5/042 \| H01S5/18
专利代理人	-
代理机构	-
文献类型	专利
条目标识符	http://ir.opt.ac.cn/handle/181661/57608
专题	半导体激光器专利数据库
作者单位	TREND LIGHTING CORP.
推荐引用方式 GB/T 7714	WANG, JONATHAN,HSIEH, PEI-CHIN,WANG, PEI-JIH,et al. Surface emitting laser structure. US20180019573A1[P]. 2018-01-18.